Stabilization of Bi vibration along c-axis in BiS2-based layered compounds La(O,F)Bi(S,Se)2 by Se substitution

被引:0
|
作者
Abbas, Fysol Ibna [1 ,2 ]
Arima, Hiroto [1 ,3 ]
Kasem, Md. Riad [1 ]
Watanabe, Yuto [1 ]
Hasegawa, Takumi [4 ]
Lee, Chul-Ho [3 ]
Yamashita, Aichi [1 ]
Mizuguchi, Yoshikazu [1 ]
机构
[1] Tokyo Metropolitan Univ, Dept Phys, Hachioji, Tokyo 1920397, Japan
[2] City Univ, Dept Elect & Elect Engn, Dhaka 1216, Bangladesh
[3] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
[4] Hiroshima Univ, Grad Sch Adv Sci & Engn, Higashihiroshima, Hiroshima 7398521, Japan
关键词
BiS2-based compound; specific heat; superconductor; thermoelectric; optical phonon;
D O I
10.35848/1882-0786/ad0ba6
中图分类号
O59 [应用物理学];
学科分类号
摘要
BiCh(2)-based layered compounds have been extensively studied as potential thermoelectric and unconventional superconducting materials. For both functionalities, in-plane chemical pressure effects improve their thermoelectric or superconducting properties. In this study, we investigate the effects of in-plane chemical pressure on atomic vibrations of Bi by analyzing lattice specific heat measured at T = 1.9-300 K with multiple Debye and Einstein models for thermoelectric LaOBi(S,Se)(2) and superconducting LaO0.5F0.5Bi(S,Se)(2). We reveal that in-plane chemical pressure enhances the oscillator number of the Einstein mode corresponding to large-amplitude Bi vibration along the c-axis in both the systems.(c) 2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd
引用
收藏
页数:5
相关论文
共 50 条
  • [21] Low superfluid density and possible multigap superconductivity in the BiS2-based layered superconductor Bi4O4S3
    Biswas, P. K.
    Amato, A.
    Baines, C.
    Khasanov, R.
    Luetkens, H.
    Lei, Hechang
    Petrovic, C.
    Morenzoni, E.
    PHYSICAL REVIEW B, 2013, 88 (22):
  • [22] Bi2O2Se-Based Memristor-Aided Logic
    Liu, Bo
    Zhao, Yudi
    Verma, Dharmendra
    Wang, Le An
    Liang, Hanyuan
    Zhu, Hui
    Li, Lain-Jong
    Hou, Tuo-Hung
    Lai, Chao-Sung
    ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (13) : 15391 - 15398
  • [23] Bi2O2Se-based CBRAM integrated artificial synapse
    Verma, Dharmendra
    Chen, Tsung-Cheng
    Liu, Bo
    Lai, Chao-Sung
    HELIYON, 2023, 9 (12)
  • [24] High-field resistivity along the c-axis of single crystalline Bi2Sr2CaCu2O8+δ
    Natl Research Inst for Metals, Ibaraki, Japan
    Phys B Condens Matter, 3-4 (269-273):
  • [25] Evolution of Superconductivity in BiS2-Based Superconductor LaO0.5F0.5Bi(S1-xSex)2
    Hiroi, Takafumi
    Kajitani, Joe
    Omachi, Atsushi
    Miura, Osuke
    Mizuguchi, Yoshikazu
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2015, 84 (02)
  • [26] Pressure-induced Superconductivity in BiS2-based Superconductors Eu2SrBi2S2.5Se1.5F4
    Ishigaki, Kento
    Gouchi, Jun
    Torizuka, Kiyoshi
    Arumugam, Sonachalam
    Ganguli, Ashok Kumar
    Haque, Zeba
    Ganesan, Kalaiselven
    Thakur, Gohil Singh
    Uwatoko, Yoshiya
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2024, 93 (02)
  • [27] c-axis electronic Raman scattering in Bi2Sr2CaCu2O8+δ
    Liu, HL
    Blumberg, G
    Klein, MV
    Guptasarma, P
    Hinks, DG
    PHYSICAL REVIEW LETTERS, 1999, 82 (17) : 3524 - 3527
  • [28] Electron and phonon transport properties of layered Bi2O2Se and Bi2O2Te from first-principles calculations
    Wang, Cong
    Ding, Guangqian
    Wu, Xuming
    Wei, Shasha
    Gao, Guoying
    NEW JOURNAL OF PHYSICS, 2018, 20
  • [29] Ultrahigh Hall mobility and suppressed backward scattering in layered semiconductor Bi2O2Se
    Tong, Tong
    Zhang, Minhao
    Chen, Yequan
    Li, Yan
    Chen, Liming
    Zhang, Junran
    Song, Fengqi
    Wang, Xuefeng
    Zou, Wenqin
    Xu, Yongbing
    Zhang, Rong
    APPLIED PHYSICS LETTERS, 2018, 113 (07)
  • [30] Layered Semiconductor Bi2O2Se for Broadband Pulse Generation in the Near-Infrared
    Xu, Rui
    Wang, Sheng
    Li, Yao
    Chen, Hanning
    Tong, Tong
    Cai, Yu
    Meng, Yafei
    Zhang, Zuxing
    Wang, Xuefeng
    Wang, Fengqiu
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2019, 31 (13) : 1056 - 1059