Towards a Universal Model of Dielectric Breakdown

被引:7
|
作者
Padovani, Andrea [1 ]
La Torraca, Paolo [2 ]
Strand, Jack [3 ,4 ,5 ]
Shluger, Alexander [3 ]
Milo, Valerio [6 ]
Larcher, Luca [6 ]
机构
[1] Univ Modena & Reggio Emilia, Engn Dept Enzo Ferrari DIEF, Via P Vivarelli 10, I-41125 Modena, MO, Italy
[2] Univ Modena & Reggio Emilia, Dept Sci & Methods Engn DISMI, Via G Amendola 2, I-42122 Reggio Emilia, RE, Italy
[3] UCL, Dept Phys & Astron, Gower St, London WC1E 6BT, England
[4] Appl Mat MDLx Italy, Reggio Emilia, Italy
[5] Nanolayers Res Comp Ltd, London, England
[6] MDLx Italy, Appl Mat, Via Meuccio Ruini 74-L, I-42124 Reggio Emilia, RE, Italy
关键词
Dielectric Breakdown; Ginestra (R); bond-breakage; precursors; carriers' injection; OXIDE BREAKDOWN; POWER-LAW; THIN GATE; VOLTAGE; DEGRADATION; DEPENDENCE; PHYSICS; HOLE; HFO2;
D O I
10.1109/IRPS48203.2023.10117846
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a microscopic breakdown (BD) model in which chemical bonds are weakened by carrier injection and trapping into pre-existing structural defects (precursors) and by the electric field. The model goes much beyond the existing ones by consistently explaining the role of both current (a weakness of the E model) and temperature (a weakness of the power-law model), along with the role of the electric field. It also explains the non-Arrhenius temperature dependence of BD. It suggests a new comprehensive physics-based framework (with tight connections to material properties) reconciling the many breakdown theories proposed so far (E, power-law, 1/E, ...) within a more universal breakdown model.
引用
收藏
页数:8
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