Towards a Universal Model of Dielectric Breakdown

被引:7
|
作者
Padovani, Andrea [1 ]
La Torraca, Paolo [2 ]
Strand, Jack [3 ,4 ,5 ]
Shluger, Alexander [3 ]
Milo, Valerio [6 ]
Larcher, Luca [6 ]
机构
[1] Univ Modena & Reggio Emilia, Engn Dept Enzo Ferrari DIEF, Via P Vivarelli 10, I-41125 Modena, MO, Italy
[2] Univ Modena & Reggio Emilia, Dept Sci & Methods Engn DISMI, Via G Amendola 2, I-42122 Reggio Emilia, RE, Italy
[3] UCL, Dept Phys & Astron, Gower St, London WC1E 6BT, England
[4] Appl Mat MDLx Italy, Reggio Emilia, Italy
[5] Nanolayers Res Comp Ltd, London, England
[6] MDLx Italy, Appl Mat, Via Meuccio Ruini 74-L, I-42124 Reggio Emilia, RE, Italy
关键词
Dielectric Breakdown; Ginestra (R); bond-breakage; precursors; carriers' injection; OXIDE BREAKDOWN; POWER-LAW; THIN GATE; VOLTAGE; DEGRADATION; DEPENDENCE; PHYSICS; HOLE; HFO2;
D O I
10.1109/IRPS48203.2023.10117846
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a microscopic breakdown (BD) model in which chemical bonds are weakened by carrier injection and trapping into pre-existing structural defects (precursors) and by the electric field. The model goes much beyond the existing ones by consistently explaining the role of both current (a weakness of the E model) and temperature (a weakness of the power-law model), along with the role of the electric field. It also explains the non-Arrhenius temperature dependence of BD. It suggests a new comprehensive physics-based framework (with tight connections to material properties) reconciling the many breakdown theories proposed so far (E, power-law, 1/E, ...) within a more universal breakdown model.
引用
收藏
页数:8
相关论文
共 50 条
  • [1] Universal measurer of the dielectric breakdown voltage
    Terpilovskij, A.I.
    Budkevich, K.B.
    Pribory i Tekhnika Eksperimenta, 1994, (01): : 209 - 210
  • [2] Proposed universal relationship between dielectric breakdown and dielectric constant
    McPherson, J
    Kim, J
    Shanware, A
    Mogul, H
    Rodriguez, J
    INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, 2002, : 633 - 636
  • [3] Generalized dielectric breakdown model
    Cafiero, R
    Gabrielli, A
    Marsili, M
    Muñoz, MA
    Pietronero, L
    PHYSICAL REVIEW B, 1999, 60 (02): : 786 - 790
  • [4] The strip dielectric breakdown model
    TONG-YI ZHANG
    MING-HAO ZHAO
    CUN-FA GAO
    International Journal of Fracture, 2005, 132 : 311 - 327
  • [5] The strip dielectric breakdown model
    Zhang, TY
    Zhao, MH
    Gao, CF
    INTERNATIONAL JOURNAL OF FRACTURE, 2005, 132 (04) : 311 - 327
  • [6] Filamentary model of dielectric breakdown
    Blonkowski, S.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (08)
  • [7] Dielectric-breakdown-induced epitaxy: A universal breakdown defect in ultrathin gate dielectrics
    Ranjan, R
    Pey, KL
    Selvarajoo, TAL
    Tang, LJ
    Tung, CH
    Lin, WH
    IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, 2004, : 53 - 56
  • [8] Dielectric-breakdown-induced epitaxy: A universal breakdown defect in ultrathin gate dielectrics
    Selvarajoo, TAL
    Ranjan, R
    Pey, KL
    Tang, LJ
    Tung, CH
    Lin, WH
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2005, 5 (02) : 190 - 197
  • [9] A stochastic model of gaseous dielectric breakdown
    Bawagan, ADO
    CHEMICAL PHYSICS LETTERS, 1997, 281 (4-6) : 325 - 331
  • [10] Material dependent dielectric breakdown model
    Arshak, Khalil
    Guiney, Ivor
    Forde, Edward
    COMPUTATIONAL MATERIALS SCIENCE, 2008, 42 (03) : 483 - 488