Thermal conductivity measurement of thermoelectric films using transient Photo-Electro-Thermal technique

被引：6

作者：

Ling, Yifeng ^{[1
,2
]}

Han, Meng ^{[1
]}

Xie, Jinqi ^{[1
]}

Qiu, Guojuan ^{[1
,2
]}

Dong, Guoying ^{[1
]}

Min, Erbiao ^{[1
,2
]}

Zhang, Ping ^{[2
]}

Zeng, Xiaoliang ^{[1
]}

Liu, Ruiheng ^{[1
]}

Sun, Rong ^{[1
]}

机构：

[1] Chinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China

[2] Guilin Univ Elect Technol, Sch Mech & Elect Engn, Guilin 541004, Peoples R China

来源：

MEASUREMENT | 2023年 / 217卷

关键词：

Thermal conductivity; Transient photo-electro-thermal; Thermoelectric films; Peltier effect; CONTACT RESISTANCE; PERFORMANCE; HEAT; NM;

D O I：

10.1016/j.measurement.2023.113058

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Accurate and rapid measurement of thermal conductivity of thin films has been a challenge so far in the field of thermoelectric (TE) materials and devices. Herein, we proposed to use a transient photo-electro-thermal (TPET) technique to measure the thermal conductivity of TE thin-films with convenience. Combining theoretical and experimental methods, we found that the TPET technique using laser beam heating can significantly reduce the influence of Peltier effect and thus achieve high test accuracy. The measurement uncertainty of TPET technique for TE films can be depressed below 10%. Furthermore, this method is not only applicable for free-standing thin film, but also for thin film deposited on as-known substrates. Finally, thermal conductivity of several films including p-type Bi0.5Sb1.5Te3, n-type Ag2Se, and n-type Bi2Te3 deposited on PI film at different temperature are accurately measured, which demonstrates the wide applicability of TPET technique on semiconductor films.

引用

页数：9

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