Hyperfine effects and electron spin relaxation of 51V4+ doped into scandium orthosilicate Sc228SiO5: CW and pulsed X-band electron spin resonance studies

被引:0
|
作者
Likerov, R. F. [1 ]
Eremina, R. M. [1 ]
Yatsyk, I. V. [1 ]
Konov, K. B. [1 ]
Shustov, V. A. [1 ]
Zavartsev, Yu. D. [2 ]
Kutovoi, S. A. [2 ]
机构
[1] Russian Acad Sci, Zavoisky Phys Tech Inst, FRC Kazan Sci Ctr, Sibirsky Trakt 10-7, Kazan 420029, Russia
[2] Russian Acad Sci, Prokhorov Gen Phys Inst, Vavilova St 38, Moscow 119333, Russia
关键词
IMPURITY; ENVIRONMENT; CRYSTAL; IONS; EPR;
D O I
10.1007/s00723-022-01522-7
中图分类号
O64 [物理化学(理论化学)、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号
070203 ; 070304 ; 081704 ; 1406 ;
摘要
The scandium orthosilicate monocrystal (Sc2SiO5)-Si-28 (SSO) doped with V-51 isotope in small concentrations (0.005% at.) was studied. We used continuous wave (CW) and pulsed electron spin resonance (ESR) methods with frequencies in the X-band range (9.3-9.8 GHz). From the orientational dependencies of the CW ESR spectra we found the following: the hyperfine interaction of the vanadium ions is very anisotropic and the Zeeman interaction is almost isotropic with principal values of the g - tensor near electron g - factor. In addition to that, we found that the charge state of vanadium ions is V4+. The directions of the principal axes of the A and g tensors were determined. The phase memory and spin-lattice relaxation were measured. It was found that the temperature dependence of the spin-lattice relaxation time can be approximated by the sum of direct and Aminov-Orbach processes with decent accuracy. The phase memory time stays in the microseconds range even at the temperature T = 30 K.
引用
收藏
页码:477 / 489
页数:13
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