Crystal structure, morphology, and electrical properties of aluminum-doped LFP materials

被引:2
|
作者
Zou, Gongsheng [1 ]
Chen, Kui [1 ]
Luo, Xianming [2 ]
Fu, Quanjun [2 ]
Wu, Bin [1 ]
机构
[1] East China Univ Sci & Technol, Sch Chem Engn, State Key Lab Chem Engn, Shanghai 200237, Peoples R China
[2] Sichuan Lomon Phosphorus Chem Ind Ltd, Mianzhu 618209, Sichuan, Peoples R China
关键词
High temperature solid phase method; LFP; Aluminum doping; Anionic radical doping; LITHIUM IRON PHOSPHATE; POSITIVE-ELECTRODE MATERIALS; OLIVINES;
D O I
10.1007/s11581-024-05489-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The effect of doping with aluminum compounds on the crystal structure, morphology, and electrochemical properties of LiFePO4 has been investigated with aluminum stearate, alumina, aluminum sulfate, and aluminum phosphate as dopants. The contraction of unit cell observed by XRD analysis and reduced lattice spacing determined by HRTEM of the doped crystals indicate that Al3+ ions, which occupy smaller space than lithium ions, are successfully doped into the lattice of LiFePO4. Lattice doping of aluminum ions enlarges Li+ transport channels; 1%-AlP-LFP has the slowest attenuation of discharge specific capacity. After 30 cycles of charge and discharge curve test at 0.5C, the retention rate of the sample is 97.43%. Owing to the substitution of S for O sites, and SO4 2- has a breaking effect on the carbon layer, this accelerates the capacity decay of 1%-AlS-LFP. The discharge capacity of 1%-AlS-LFP is 132.9 mAh/g, which is lower than 139.8mAh/g of LFP. The electrochemical impedance spectroscopy (EIS) results show that the resistance of 1%-AlP-LFP is 147.1 omega, the resistance of LFP is 138.9 omega, and the resistance of LFP is 183.9 omega. The Li+ diffusion coefficient of 1%-AlP-LFP is partially increased; the double substitution of Al3+ and S2- slows the migration rate of Li+.
引用
收藏
页码:3431 / 3442
页数:12
相关论文
共 50 条
  • [41] Effect on structural, optical and electrical properties of aluminum-doped zinc oxide films using diode laser annealing
    Hsiao, Wen-Tse
    Tseng, Shih-Feng
    Chung, Chien-Kai
    Chiang, Donyau
    Huang, Kuo-Cheng
    Lin, Keh-Moh
    Li, Liang-Yan
    Chen, Ming-Fei
    OPTICS AND LASER TECHNOLOGY, 2015, 68 : 41 - 47
  • [42] The densification, microstructure, and electrical properties of aluminum-doped zinc oxide sputtering target for transparent conductive oxide film
    Wu, Ming-Wei
    Liu, Day-Shan
    Su, Yu-Hsiang
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2012, 32 (12) : 3265 - 3275
  • [43] Deposition of aluminum-doped zinc oxide films by RF magnetron sputtering and study of their structural, electrical and optical properties
    Jeong, SH
    Lee, JW
    Lee, SB
    Boo, JH
    THIN SOLID FILMS, 2003, 435 (1-2) : 78 - 82
  • [44] Optimization of the electrical properties of magnetron sputtered aluminum-doped zinc oxide films for opto-electronic applications
    Agashe, C
    Kluth, O
    Schöpe, G
    Siekmann, H
    Hüpkes, J
    Rech, B
    THIN SOLID FILMS, 2003, 442 (1-2) : 167 - 172
  • [45] Nonlinear properties of aluminum-doped zinc sulfide under IR excitation
    Grigoryev, L. V.
    Rychgorskyi, V. V.
    Komarov, E. V.
    Sychov, M. M.
    Sergeev, E. V.
    Tarasova-Tarosyan, L. I.
    Kuznetsov, A. I.
    JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2006, 14 (07) : 653 - 655
  • [46] Preparation and properties for aluminum-doped zinc oxide powders with the coprecipitation method
    Shui, Anze
    Wang, Shumei
    Wang, Hui
    Cheng, Xiaosu
    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2009, 117 (1365) : 703 - 705
  • [47] Effect of Annealing Ambient on the Electrical and Optical Properties of Aluminum-Doped ZnO Films Produced via a Sol–Gel Process
    Yung-Shou Ho
    Yi-Siou Chen
    Cheng-Heng Wu
    Journal of Electronic Materials, 2014, 43 : 2644 - 2650
  • [48] ELECTRICAL-CONDUCTIVITY OF ALUMINUM-DOPED TIO2 CERAMIC AFTER QUENCHING
    PENNEWISS, J
    HOFFMANN, B
    MATERIALS LETTERS, 1987, 5 (04) : 121 - 125
  • [49] Optical, electrical and structural properties of aluminum-doped nano-zinc oxide thin films deposited by magnetron sputtering
    Jin Hua Gu
    Lu Long
    Zhou Lu
    Zhi You Zhong
    Journal of Materials Science: Materials in Electronics, 2015, 26 : 734 - 741
  • [50] Ultraviolet Emission and Electrical Properties of Aluminum-Doped Zinc Oxide Thin Films with Preferential C-Axis Orientation
    Zhang, Daoli
    Zhang, Jianbing
    Cheng, Youguang
    Yuan, Lin
    Miao, Xiangshui
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2010, 93 (10) : 3291 - 3298