Effects of inorganic seed promoters on MoS2 few-layers grown via chemical vapor deposition

In the last years, transition metal dichalcogenides (TMDs), especially at the two-dimensional (2D) limit, gained a large interest due to their unique optical and electronic properties. Among them, MoS2 received great attention from the scientific community due to its versatility, workability, and applicability in a large number of fields such as electronics, optoelectronics and electrocatalysis. To open the possibility of 2D-MoS2 exploitation, its synthesis over large macroscopic areas using cost-effective methods is fundamental. In this study, we report a method for the synthesis of large-area (similar to cm(2)) few-layers MoS2 via liquid precursor CVD (L-CVD), where the Mo precursor (i.e. ammonium heptamolybdate AHM) is provided via a solution that is spin-coated over the substrate. Given the capability of organic and inorganic molecules, such as alkaline salts, to enhance MoS2 growth, we investigated the action of different inorganic salts as seed promoters. In particular, by using visible Raman spectroscopy, we focused on the effect of Na(OH), KCl, KI, and Li(OH) on the thickness, morphology, uniformity and degree of coverage of the grown MoS2. We optimized the process tuning parameters such as the volume of spin-coated solution, the growth temperature, and the seed promoter concentration, to synthesise the lowest possible thickness which resulted to be 2 layers (2L) of the highest quality. We witnessed that the addition of an inorganic seed promoter in the solution improves the extension of the grown MoS2 promoting lateral growth front, and therefore the degree of coverage. From this study, we conclude that, amongst the investigated seed promoters, K-based salts proved to grant the growth of high-quality two-layer MoS2 with optimal and uniform coverage of the SiO2/Si substrate surface.