Two-dimensional magnetic materials for spintronic applications

被引:15
|
作者
Kajale, Shivam N. [1 ]
Hanna, Jad [1 ,2 ]
Jang, Kyuho [1 ]
Sarkar, Deblina [1 ]
机构
[1] MIT, MIT Media Lab, Cambridge, MA 02139 USA
[2] Swiss Fed Inst Technol, Dept Informat Technol & Elect Engn, CH-8092 Zurich, Switzerland
关键词
spintronics; van der Waals; magnetic tunnel junction (MTJ); spin-orbit torque; magnetism; FIELD-EFFECT TRANSISTOR; CURIE TEMPERATURES; GRAPHENE FILMS; ATOMIC LAYERS; 2D MATERIALS; THIN-FILMS; SPIN; FERROMAGNETISM; CRYSTAL; ORDER;
D O I
10.1007/s12274-024-6447-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Spintronic devices are driving new paradigms of bio-inspired, energy efficient computation like neuromorphic stochastic computing and in-memory computing. They have also emerged as key candidates for non-volatile memories for embedded systems as well as alternatives to persistent memories. To meet the growing demands from such diverse applications, there is need for innovation in materials and device designs which can be scaled and adapted according to the application. Two-dimensional (2D) magnetic materials address challenges facing bulk magnet systems by offering scalability while maintaining device integrity and allowing efficient control of magnetism. In this review, we highlight the progress made in experimental studies on 2D magnetic materials towards their integration into spintronic devices. We provide an account of the various relevant material discoveries, demonstrations of current and voltage-based control of magnetism and reported device systems, while also discussing the challenges and opportunities towards integration of 2D magnetic materials in commercial spintronic devices.
引用
收藏
页码:743 / 762
页数:20
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