Perspective on defect control in semiconductors for photovoltaics

被引:2
|
作者
Cai, Xuefen [1 ,2 ]
Wei, Su-Huai [2 ]
机构
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing 100083, Peoples R China
[2] Beijing Computat Sci Res Ctr, Beijing 100193, Peoples R China
基金
中国国家自然科学基金;
关键词
MINORITY-CARRIER LIFETIME; CU(IN; GA)SE-2; SOLAR-CELLS; NONRADIATIVE RECOMBINATION; HALIDE PEROVSKITES; NATIVE DEFECTS; POINT-DEFECTS; DOPING LIMIT; II-VI; CDTE; SINGLE;
D O I
10.1063/5.0178959
中图分类号
O59 [应用物理学];
学科分类号
摘要
Harnessing the boundless solar energy, photovoltaic cells emerge as pivotal players in the world's sustainable energy landscape. The efficiency of solar cells is intimately tied to the carrier properties influenced by defects and impurities within the sunlight-absorbing semiconductors. In this Perspective, we offer a brief overview of recent advances in exploring doping properties with a focus on three vital thin-film photovoltaic semiconductors: CdTe, CIGS, and halide perovskites. Our discourse encompasses their electronic band structure, intrinsic and extrinsic doping behaviors, defect-assisted nonradiative recombination losses, as well as promising strategies poised to enhance solar cell efficiency. Additionally, we discuss several lingering challenges associated with defects in the advancement of photovoltaic technologies.
引用
收藏
页数:9
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