Novel Concurrent Dual-Band Power Amplifier Design Using A Bridged-T Coil-Based Impedance Matching Network

In this paper, a novel design of concurrent dual-band power amplifier is proposed. Specifically, dual-band impedance matching networks based on bridged-T coils are employed to simultaneously achieve the desired input/output impedance matching at two independent frequencies. The proposed 2.45/5.5-GHz concurrent dual-band power amplifier is implemented using a commercial 0.15-mu m GaAs pHEMT process. In the CW mode of operation, it achieves a power-added efficiency of 31.4/32.6% with a corresponding output power of 24.3/24.6 dBm at 2.45/5.5 GHz. A compact chip size of 2.5 mm x 2.0 mm is achieved, which is about 0.046 lambda(0) x 0.037 lambda(0) at 5.5 GHz.