CONCURRENT DUAL-BAND GaN POWER AMPLIFIER WITH COMPACT MICROSTRIP MATCHING NETWORK

被引：9
|
作者：
Bespalko, D. T. [1 ]
Boumaiza, S. [1 ]
机构：
[1] Univ Waterloo, Dept Elect Engn, Waterloo, ON N2L 3G1, Canada
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2009年 / 51卷 / 06期
关键词：
dual-band; GaN; impedance inverter; power amplifiers;
D O I：
10.1002/mop.24380
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A concurrent dual-band power amplifier (PA) using circuit transformations in the design of the dual-band matching networks (MN) are outlined and a transmission line compression technique is used reduce the insertion loss of the MNs. A 10- W Gallium Nitride based PA operating concurrently at 2.5 GHz and 3.5 GHz is compared with the performance of the equivalent single-band PAs. (C) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1604-1607, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24380
引用
收藏
页码：1604 / 1607
页数：4
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