Improved Far-Field Angle in Narrow-Ridge High-Power Laser Diodes Using a Double Stripe Structure

被引：0

作者：

Kim, Daehong ^{[1
]}

Yang, Jung-Tack ^{[2
]}

Choi, Woo-Young ^{[2
]}

Kim, Younghyun ^{[1
]}

机构：

[1] Hanyang Univ, Dept Photon & Nanoelect, BK 21 FOUR ERICA ACE Ctr, Ansan 15588, South Korea

[2] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea

来源：

IEEE PHOTONICS JOURNAL | 2023年 / 15卷 / 06期

关键词：

Diode lasers; Numerical models; Temperature; Refractive index; Optical variables control; Optical refraction; Optical device fabrication; Far-field angle; high-power laser diode; lateral modes; loss tailoring; mode weight engineering;

D O I：

10.1109/JPHOT.2023.3331194

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a novel double stripe structure for achieving a narrow far-field angle without significant output power loss in narrow-ridge high-power broad-area laser diodes. By introducing double SiO2 stripes on the top side of the laser diode, we effectively suppress high-order modes through mode weight engineering. Through self-consistent electro-thermal-optical simulations powered by LASTIP with the well-verified model from the reference, we comprehensively analyze and compare the characteristics of high-power broad-area laser diodes utilizing the loss tailoring technique that adopted the much simpler structure compared to prior study and our proposed structure. Our results demonstrate a significant reduction of approximately 36% in the far-field angle while maintaining slope efficiency. This approach shows promise for enhancing the performance of coupling efficiency between narrow-ridge high-power laser diodes and fibers.

引用

页码：1 / 7

页数：7

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