Interface defects repair of core/shell quantum dots through halide ion penetration

被引:6
|
作者
Yuan, Changwei [1 ]
He, Mengda [1 ]
Liao, Xinrong [1 ]
Liu, Mingming [1 ]
Zhang, Qinggang [1 ]
Wan, Qun [2 ]
Qu, Zan [1 ]
Kong, Long [1 ]
Li, Liang [2 ]
机构
[1] Shanghai Jiao Tong Univ, Sch Environm Sci & Engn, Shanghai 200240, Peoples R China
[2] Macau Univ Sci & Technol, Macao Inst Mat Sci & Engn MIMSE, Taipa 999078, Macao, Peoples R China
基金
中国国家自然科学基金;
关键词
OXIDATION; PASSIVATION; EFFICIENT; EMISSION;
D O I
10.1039/d3sc04136k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The interface defects of core-shell colloidal quantum dots (QDs) affect their optoelectronic properties and charge transport characteristics. However, the limited available strategies pose challenges in the comprehensive control of these interface defects. Herein, we introduce a versatile strategy that effectively addresses both surface and interface defects in QDs through simple post-synthesis treatment. Through the combination of fine chemical etching methods and spectroscopic analysis, we have revealed that halogens can diffuse within the crystal structure at elevated temperatures, acting as "repairmen" to rectify oxidation and significantly reducing interface defects within the QDs. Under the guidance of this protocol, InP core/shell QDs were synthesized by a hydrofluoric acid-free method with a full width at half-maximum of 37.0 nm and an absolute quantum yield of 86%. To further underscore the generality of this strategy, we successfully applied it to CdSe core/shell QDs as well. These findings provide fundamental insights into interface defect engineering and contribute to the advancement of innovative solutions for semiconductor nanomaterials. This work first reports a versatile post-synthesis strategy that drive halogens diffuse within crystal structures at elevated temperature, acting as "repairmen" to rectify oxidation and significantly reduce interface defects within core-shell QDs.
引用
收藏
页码:13119 / 13125
页数:7
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