Current-induced switching of a van der Waals ferromagnet at room temperature

Recent discovery of emergent magnetismin van der Waalsmagneticmaterials (vdWMM) has broadened the material space for developing spintronic devices for energy-efficient computation. While there has been appreciable progress in vdWMM discovery, a solution for non-volatile, deterministic switching of vdWMMs at room temperature has been missing, limiting the prospects of their adoption into commercial spintronic devices. Here, we report the first demonstration of current-controlled non-volatile, deterministic magnetization switching in a vdW magnetic material at room temperature. We have achieved spin-orbit torque (SOT) switching of the PMA vdW ferromagnet Fe3GaTe2 using a Pt spin-Hall layer up to 320 K, with a threshold switching current density as low as J(sw) = 1.69 x 10(6) A cm(-2) at room temperature. We have also quantitatively estimated the anti-damping-like SOT efficiency of our Fe3GaTe2/Pt bilayer system to be xi(DL) = 0:093, using the second harmonic Hall voltage measurement technique. These results mark a crucial step in making vdW magnetic materials a viable choice for the development of scalable, energy-efficient spintronic devices.