Interstitial Doping of SnO2 Film with Li for Indium-Free Transparent Conductor

被引：1

作者：

Chen, Xingqian ^{[1
,2
,3
,6
]}

Li, Haozhen ^{[1
,2
,3
,6
]}

Chen, Wei ^{[3
,5
]}

Mei, Zengxia ^{[1
,2
,3
]}

Azarov, Alexander ^{[4
]}

Kuznetsov, Andrej ^{[4
]}

Du, Xiaolong ^{[1
,2
,3
,5
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[3] Songshan Lake Mat Lab, Dongguan 523808, Peoples R China

[4] Univ Oslo, Dept Phys, Ctr Mat Sci & Nanotechnol, POB 1048, N-0316 Oslo, Norway

[5] Guangdong SinoPrime Technol Co Ltd, Dongguan 523808, Peoples R China

[6] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2024年 / 41卷 / 03期

关键词：

542.4 Lithium and Alloys - 549.1 Alkali Metals - 549.3 Others; including Bismuth; Boron; Cadmium; Cobalt; Mercury; Niobium; Selenium; Silicon; Tellurium and Zirconium - 701.1 Electricity: Basic Concepts and Phenomena - 712.1 Semiconducting Materials - 802.2 Chemical Reactions - 911.2 Industrial Economics;

D O I：

10.1088/0256-307X/41/3/037305

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

SnO2 films exhibit significant potential as cost-effective and high electron mobility substitutes for In2O3 films. In this study, Li is incorporated into the interstitial site of the SnO2 lattice resulting in an exceptionally low resistivity of 2.028 x 10(-3 )omega & sdot;cm along with a high carrier concentration of 1.398 x 10(20) cm(-3 )and carrier mobility of 22.02 cm2/V & sdot;s. Intriguingly, Li i readily forms in amorphous structures but faces challenges in crystalline formations. Furthermore, it has been experimentally confirmed that Li i acts as a shallow donor in SnO2 with an ionization energy Delta E-D1 of -0.4 eV, indicating spontaneous occurrence of Li i ionization.

引用

页数：6

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