beta-Ga2O3;
nanowire arrays;
electron density functional;
ab initio pseudopotential;
valence electron density distribution;
electron state density distribution;
Coulomb potential;
synergistic properties;
FABRICATION;
GALLIUM;
GROWTH;
D O I:
10.15330/pcss.24.1.56-63
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Using the methods of electron density functional and ab initio pseudopotential, the spatial distributions of valence electron density, the density of electronic states, and Coulomb potentials along the specified directions within the arrays of beta-Ga2O3 nanowires with different cross-sectional shapes and positions in arrays were calculated. Synergistic properties of arrays of wires are established. The degree of influence of the wires on each other is determined depending on the geometric parameters of their mutual location in the array The electronic characteristics of the array of wires as a whole are determined.
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Liu Hao
Xu Chenxiao
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机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Xu Chenxiao
Pan Xinhua
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h-index: 0
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Pan Xinhua
Ye Zhizhen
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h-index: 0
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China