Transient Analytical Model of High-Voltage and High-Power IGBT Device Based on Nondual Relationship for the Switching Process

被引：3
|
作者：
Hao, Bin [1 ]
Yang, Yixuan [1 ]
Tang, Xinling [2 ]
Zhao, Zhibin [1 ]
机构：
[1] North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China
[2] Beijing Inst Smart Energy, State Key Lab Adv Power Transmiss Technol, Beijing 102211, Peoples R China
来源：
IEEE TRANSACTIONS ON POWER ELECTRONICS | 2023年 / 38卷 / 03期
关键词：
Insulated gate bipolar transistors; Analytical models; Integrated circuit modeling; Switching circuits; Transient analysis; Logic gates; Switches; High-voltage and high-power insulated gate bipolar transistor (IGBT) device; nondual relationship of the switching process; transient analysis model (TAM); REAL-TIME SIMULATION; MOSFET;
D O I：
10.1109/TPEL.2022.3219258
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter focuses on the accurate simulation of the turn-OFF current for high-voltage and high-power IGBT devices and proposes a modelingmethod of transient analysis model (TAM) for IGBTdevices based on the nondual relationship of the switching process. Combined with the structural features of the IGBT chip, the carrier storage effect is analyzed and the analytical expression of di/dt during the turn-OFF process is corrected. Compared with the existing dual modeling methods, the accuracy of the nondual modeling method for di/dt during the turn-OFF process has been greatly improved.
引用
收藏
页码：2827 / 2832
页数：6
相关论文
共 50 条
  • [41] A HIGH-VOLTAGE MODULATOR FOR HIGH-POWER RF SOURCE RESEARCH
    MULLIGAN, WJ
    CHEN, SC
    BEKEFI, G
    DANLY, BG
    TEMKIN, RJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (04) : 817 - 821
  • [42] Base Switch Element for High-Power High-Voltage Converters
    Voronin, Igor P.
    Dukhnich, Elena M.
    2018 19TH INTERNATIONAL CONFERENCE OF YOUNG SPECIALISTS ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES (EDM 2018), 2018, : 545 - 550
  • [43] TRIGGER DEVICE FOR HIGH-VOLTAGE POWER THYRATRONS
    MODZOLEVSKII, VI
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1990, 33 (03) : 606 - 610
  • [44] Junction Temperature Extraction Approach With Turn-Off Delay Time for High-Voltage High-Power IGBT Modules
    Luo, Haoze
    Chen, Yuxiang
    Sun, Pengfei
    Li, Wuhua
    He, Xiangning
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2016, 31 (07) : 5122 - 5132
  • [45] High-Voltage ESD Protection Device With Fast Transient Reaction and High Holding Voltage
    Lai, Da-Wei
    de Raad, Gijs
    Sque, Stephen
    Peters, Wim
    Smedes, Theo
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (07) : 2884 - 2891
  • [46] Wideband Mechanism Model and Parameter Extracting for High-Power High-Voltage High-Frequency Transformers
    Liu, Chen
    Qi, Lei
    Cui, Xiang
    Shen, Zhiyuan
    Wei, Xiaoguang
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2016, 31 (05) : 3444 - 3455
  • [47] Warping model of high-power IGBT modules subjected to reflow soldering process
    Gao, Shang
    Wang, Rongliang
    Wang, Haoxiang
    Kang, Renke
    INTERNATIONAL JOURNAL OF MECHANICAL SCIENCES, 2023, 251
  • [48] Analytic Calculation Method of Power Loss for High Voltage and High Power IGBT Device
    Ning, Jian
    Hao, Bin
    Li, Jianhui
    Zhao, Zhibin
    PROCEEDINGS OF 2023 INTERNATIONAL CONFERENCE ON WIRELESS POWER TRANSFER, VOL 4, ICWPT 2023, 2024, 1161 : 366 - 373
  • [49] A High-Power High-Voltage Power Supply for Long-Pulse Applications
    Pokryvailo, Alex
    Carp, Costel
    Scapellati, Clifford
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 2010, 38 (10) : 2604 - 2610
  • [50] High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: I. Physics of the switching process
    A. S. Kyuregyan
    Semiconductors, 2017, 51 : 1208 - 1213
12345