Transient Analytical Model of High-Voltage and High-Power IGBT Device Based on Nondual Relationship for the Switching Process

被引：3
|
作者：
Hao, Bin [1 ]
Yang, Yixuan [1 ]
Tang, Xinling [2 ]
Zhao, Zhibin [1 ]
机构：
[1] North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China
[2] Beijing Inst Smart Energy, State Key Lab Adv Power Transmiss Technol, Beijing 102211, Peoples R China
来源：
IEEE TRANSACTIONS ON POWER ELECTRONICS | 2023年 / 38卷 / 03期
关键词：
Insulated gate bipolar transistors; Analytical models; Integrated circuit modeling; Switching circuits; Transient analysis; Logic gates; Switches; High-voltage and high-power insulated gate bipolar transistor (IGBT) device; nondual relationship of the switching process; transient analysis model (TAM); REAL-TIME SIMULATION; MOSFET;
D O I：
10.1109/TPEL.2022.3219258
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter focuses on the accurate simulation of the turn-OFF current for high-voltage and high-power IGBT devices and proposes a modelingmethod of transient analysis model (TAM) for IGBTdevices based on the nondual relationship of the switching process. Combined with the structural features of the IGBT chip, the carrier storage effect is analyzed and the analytical expression of di/dt during the turn-OFF process is corrected. Compared with the existing dual modeling methods, the accuracy of the nondual modeling method for di/dt during the turn-OFF process has been greatly improved.
引用
收藏
页码：2827 / 2832
页数：6
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