Numerical Analysis of the Effect of Retaining Ring Structure on the Chemical Mechanical Polishing Abrasive Motion State

被引:1
|
作者
Zhang, Siqi [1 ,2 ]
Liu, Yiran [2 ]
Li, Weimin [1 ,2 ,3 ]
Cao, Jun [4 ]
Huang, Jiaye [2 ]
Zhu, Lei [2 ,3 ]
Guan, Zijun [2 ]
机构
[1] Shanghai Univ, Sch Microelect, Shanghai 200444, Peoples R China
[2] Shanghai Inst IC Mat, Shanghai 200050, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
[4] East China Univ Sci & Technol, Sch Mech & Power Engn, Shanghai 200237, Peoples R China
关键词
chemical mechanical polishing; abrasive; retaining ring; size of grooves; quantity of grooves; numerical simulation; SLURRY FILM THICKNESS; REMOVAL RATE; SLOT DESIGNS; SILICON; PLANARIZATION; WAFER; CMP; WEAR; SIMULATION; PARTICLES;
D O I
10.3390/ma16010062
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Optimizing the retaining ring structure can improve the quality of Chemical Mechanical Polishing (CMP). This study establishes a two-dimensional Computational Fluid Dynamics-Discrete Element Method (CFD-DEM) model, while the model is validated by experiments. The results graphically demonstrate the influence of the retaining ring groove design on the motion of the slurry abrasive particles. The size of the retaining ring groove appears to have a threshold value, above which the abrasives start to have significant distribution in the wafer region. As the groove size continues to increase, the number of abrasives entering the ring increases abruptly and oscillates at specific nodes. The abrasive transfer rate increases with the number of grooves in the early stage but reaches a limit at a certain number of grooves. Meanwhile, the retaining ring position affects the transfer of the abrasives. This study provides a base for optimizing the design of retaining rings.
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页数:17
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