A first-principles study of 2D single-layer SiP as anode materials for lithium-ion batteries and sodium-ion batteries

被引:7
|
作者
Xing, Yingying [1 ]
Cao, Chihao [1 ]
Huang, Zhong [1 ]
Huang, Liang [1 ]
Zhang, Haijun [1 ]
Jia, Quanli [2 ]
机构
[1] Wuhan Univ Sci & Technol, Sch Mat & Met, State Key Lab Refractories & Met, Wuhan 430081, Peoples R China
[2] Zhengzhou Univ, Henan Key Lab High Temp Funct Ceram, Zhengzhou 450052, Peoples R China
基金
中国国家自然科学基金;
关键词
GENERALIZED GRADIENT APPROXIMATION; CAPACITY ELECTRODE MATERIAL; NEGATIVE ELECTRODE; SILICON; COMPOSITE; CARBON; TRANSITION; STORAGE; MOS2; NANOPARTICLES;
D O I
10.1039/d3cp05164a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The promotion of lithium-ion batteries and sodium-ion batteries is limited by the deficiency of suitable anode materials with desired electrochemical properties. In this work, the models of 2D single-layer SiP are constructed to explore its potential as an anode material for LIBs and SIBs using density functional theory (DFT). The diffusion of Li in bulk SiP is anisotropic. There is a low diffusion energy barrier of 0.28 eV along the X-axis. The low surface exfoliation energy suggests that there is a high probability of preparing 2D single-layer SiP experimentally. Its structure stability is verified by ab initio molecular dynamics (AIMD) simulations at 300 K and 400 K. The intercalation and diffusion behaviors of Li/Na on 2D single-layer SiP indicate that Li/Na tends to diffuse along the X-axis direction of 2D single-layer SiP. The diffusion energy barrier of Li/Na on 2D single-layer SiP is lower compared to that of bulk SiP. The conductivity of 2D single-layer SiP is improved after lithiation due to the upshift of Fermi levels. 2D single-layer SiP has a lower average open circuit voltage (1.50 V for LIBs and 1.08 V for SIBs) and a high theoretical capacity (520 mA h g-1). Hence, 2D single-layer SiP can be an ideal anode material for LIBs and SIBs. 2D single-layer SiP as an anode material of LIBs and SIBs has a low diffusion energy barrier.
引用
收藏
页码:7072 / 7082
页数:11
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