Modeling the Electrical Degradation of Micro-Transfer Printed 845 nm VCSILs for Silicon Photonics

被引：1
|
作者：
Zenari, Michele [1 ]
Buffolo, Matteo [1 ]
De Santi, Carlo [3 ]
Goyvaerts, Jeroen [2 ]
Grabowski, Alexander [3 ]
Gustavsson, Johan [3 ]
Baets, Roel [4 ]
Larsson, Anders [3 ]
Roelkens, Guenther [4 ]
Meneghesso, Gaudenzio [1 ]
Zanoni, Enrico [1 ]
Meneghini, Matteo [5 ,6 ]
机构：
[1] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy
[2] LIGENTEC SA, CH-1024 Ecublens, Switzerland
[3] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Photon Lab, SE-41296 Gothenburg, Sweden
[4] Ghent Univ Imec, Photon Res Grp, B-9052 Ghent, Belgium
[5] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy
[6] Univ Padua, Dept Phys & Astron, I-35131 Padua, Italy
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 02期
关键词：
Vertical cavity surface emitting lasers; Degradation; Resistance; Stress; Impurities; Substrates; Optical reflection; diffusion; impurities; silicon photonics (SiPh); vertical-cavity silicon-integrated laser (VCSIL);
D O I：
10.1109/TED.2023.3346370
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This article deals for the first time with the electrical degradation of novel 845 nm vertical-cavity silicon-integrated lasers (VCSILs) for silicon photonics (SiPh). We analyzed the reliability of these devices by submitting them to high current stress. The experimental results showed that stress induced: 1) a significant increase in the series resistance, occurring in two separated time-windows and 2) a lowering of the turn-on voltage. To understand the origin of such degradation phenomena, we simulated the I-V characteristics and the band diagrams by a Poisson-drift-diffusion simulator. We demonstrated that the degradation was caused by the diffusion of mobile species capable of compensating the p-type doping. The diffusing species are expected to migrate from the p-contact region in the top distributed Bragg reflector (DBR) towards the active layers.
引用
收藏
页码：1131 / 1138
页数：8
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