Aluminum doped zinc oxide thin films with lower activation energy prepared by radio frequency magnetron sputtering

被引：0
|
作者：
Ullah, Sana [1 ]
机构：
[1] Khwaja Fareed Univ Engn & Informat Technol, Inst Mech & Mfg Engn, Rahim Yar Khan 64200, Pakistan
来源：
FUNCTIONAL MATERIALS | 2023年 / 30卷 / 03期
关键词：
aluminium zinc oxide; zinc oxide; n-type materials; activation energy; doping; magnetron sputtering; ZNO; DEFECTS;
D O I：
10.15407/fm30.03.338
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films of aluminum-doped zinc oxide (AZO) with reduced activation energy have been obtained and studied. Thin aluminum-doped zinc oxide films were grown by RF magnetron sputtering on silicon and glass substrates with different oxygen content in working gases (Ar + O-2). It was found that the activation energy of aluminum-doped zinc oxide films is about 0.03 eV and varies with the oxygen content.
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收藏
页码：338 / 343
页数：6
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