Design of an Extended Continuous-Mode Class-GF Power Amplifier With Multioctave Bandwidth

被引：16
|
作者：
Xuan, Xuefei [1 ,2 ]
Cheng, Zhiqun [1 ,3 ]
Zhang, Zhiwei [1 ]
Gong, Tinwei [1 ]
Liu, Guohua [1 ]
Le, Chao [1 ]
机构：
[1] Hangzhou Dianzi Univ, Sch Elect & Informat, Hangzhou 310018, Peoples R China
[2] Huainan Normal Univ, Sch Elect Engn, Huainan 232038, Peoples R China
[3] Xinjiang Inst Technol, Sch Informat Engn, Xinjiang 843100, Peoples R China
来源：
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2023年 / 33卷 / 09期
关键词：
Extended continuous Class-GF (ECCGF); high-efficiency; input nonlinearity; multioctave; power amplifier (PA); GATE NODE; EFFICIENCY; OUTPUT; INPUT;
D O I：
10.1109/LMWT.2023.3292155
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An extended version of the continuous-mode Class-GF power amplifier (PA) design theory is first proposed in this letter by analyzing the impact of input voltage waveform alterations caused by input nonlinearity on the drain current waveform. Then, a novel impedance design space is explored under the extended continuous-mode drain voltage waveform. Thereafter, a multioctave, high-efficiency extended continuous Class-GF (ECCGF) PA component was implemented, fabricated, and measured with a 10-W GaN HEMT device over a 150% bandwidth from 0.4 to 2.8 GHz. The test result shows that the 39-42-dBm output power, 63%-73.2% drain efficiency (DE), and 9-12-dB gain are achieved in the target band.
引用
收藏
页码：1329 / 1332
页数：4
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