Design of an Extended Continuous-Mode Class-GF Power Amplifier With Multioctave Bandwidth

被引：16

作者：

Xuan, Xuefei ^{[1
,2
]}

Cheng, Zhiqun ^{[1
,3
]}

Zhang, Zhiwei ^{[1
]}

Gong, Tinwei ^{[1
]}

Liu, Guohua ^{[1
]}

Le, Chao ^{[1
]}

机构：

[1] Hangzhou Dianzi Univ, Sch Elect & Informat, Hangzhou 310018, Peoples R China

[2] Huainan Normal Univ, Sch Elect Engn, Huainan 232038, Peoples R China

[3] Xinjiang Inst Technol, Sch Informat Engn, Xinjiang 843100, Peoples R China

来源：

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2023年 / 33卷 / 09期

关键词：

Extended continuous Class-GF (ECCGF); high-efficiency; input nonlinearity; multioctave; power amplifier (PA); GATE NODE; EFFICIENCY; OUTPUT; INPUT;

D O I：

10.1109/LMWT.2023.3292155

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An extended version of the continuous-mode Class-GF power amplifier (PA) design theory is first proposed in this letter by analyzing the impact of input voltage waveform alterations caused by input nonlinearity on the drain current waveform. Then, a novel impedance design space is explored under the extended continuous-mode drain voltage waveform. Thereafter, a multioctave, high-efficiency extended continuous Class-GF (ECCGF) PA component was implemented, fabricated, and measured with a 10-W GaN HEMT device over a 150% bandwidth from 0.4 to 2.8 GHz. The test result shows that the 39-42-dBm output power, 63%-73.2% drain efficiency (DE), and 9-12-dB gain are achieved in the target band.

引用

页码：1329 / 1332

页数：4

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