Optoelectronic device based on lithium niobate nanofilms deposited at various pulsed laser wavelengths

Lithium niobate is a promising material involved in a variety of optoelectronic device fabrication. In this paper, lithium niobate was prepared using the pulse laser deposition technique for designing a planer waveguide with enhanced properties. At different wavelengths of the pulsed laser, a nonphotonic lithium niobate thin film was deposited on the quartz substrate. Structural, optical, and electrical properties of the prepared films were studied and analyzed with X-ray diffraction and it found a single crystal peck location at 2 theta = 39.225 degrees which corresponds to the phase of 006, scanning electron and atomic force microscopy, where the average size is found are ranged from 94 nm and the roughness are ranged from 8.5 to 11.3 nm, UV-VIS spectrophotometer, and electrical properties were investigated and found the deposited nanofilms have high transmissions are ranged 68-84%, and the energy bandgap values are 4.02 eV and 4.15 eV. A MOS device was created, and its electrical characteristics were well-supported.