Enhanced resistive switching performance of spinel MnCo2O4 resistive random access memory devices: Effects of annealing temperatures and annealing atmospheres

被引：3
|
作者：
Du, Ling [1 ]
Li, Jiacheng [1 ]
Zhang, Yu [1 ]
Qin, Ni [1 ]
Bao, Dinghua [1 ]
机构：
[1] Sun Yat Sen Univ, Sch Mat Sci & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China
来源：
CURRENT APPLIED PHYSICS | 2023年 / 48卷
基金：
中国国家自然科学基金;
关键词：
Resistive switching; Spinel MnCo 2 O 4; Switching mechanism; Oxygen vacancies; MAGNETIC-PROPERTIES; FILMS; RRAM;
D O I：
10.1016/j.cap.2023.02.004
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The spinel MnCo2O4 (MCO) thin films were fabricated on Pt/Ti/SiO2/Si substrates for resistive memories via sol -gel spin-coating deposition method under different annealing temperatures and annealing atmospheres. The 650oC-annealing Pt/MCO/Pt device shows better bipolar resistance switching parameters than the devices annealed at 600 degrees C and 700 degrees C. The nitrogen-annealing Pt/MCO/Pt device exhibits optimum resistance switching parameters due to increasing of the oxygen-vacancies proportion, formation of confined and stable conductive filaments, and suppressing of the randomness of oxygen vacancies. The carrier transportation mechanisms of the devices with numerous oxygen-vacancies content in low resistance state (LRS) and high resistance state (HRS) are dominated by Ohmic conduction and Schottky emission, respectively. For the devices with fewer oxygen-vacancies content, the conduction mechanisms at LRS and HRS can be described by nearest-neighboring hop-ping conduction and space-charge-limited current model, respectively. This work indicates that the spinel MCO films have good potential application in resistive random access memory.
引用
收藏
页码：123 / 133
页数：11
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