Insight into the quantum anomalous Hall states in two-dimensional kagome Cr3Se4 and Fe3S4 monolayers

被引:6
|
作者
Lian, Huijie [1 ,2 ]
Xu, Xiaokang [3 ]
Han, Ying [3 ]
Li, Jie [3 ]
Zhou, Wenqi [3 ]
Yao, Xiaojing [1 ,2 ]
Lu, Jinlian [4 ]
Zhang, Xiuyun [3 ]
机构
[1] Hebei Normal Univ, Coll Phys, Shijiazhuang 050024, Peoples R China
[2] Hebei Normal Univ, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R China
[3] Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Peoples R China
[4] Yancheng Inst Technol, Dept Phys, Yancheng 224051, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
INSULATOR;
D O I
10.1039/d3nr03582d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
To realize the quantum anomalous Hall (QAH) effect in two-dimensional (2D) intrinsic magnetic materials, which combines insulating bulk states and metallic edge channel states, is still challenging in experiment. Here, based on first-principles calculations, we predicted two stable kagome-latticed QAH insulators: Cr3Se4 and Fe3S4 monolayers, with the Chern number C = 1. It is found that both structures exhibit a large magnetic anisotropy energy and sizable band gaps, and a topological phase transition from C = -1 to C = 1 occurs when the magnetization orientation changes from the z-axis to the -z-axis. Remarkably, the non-trivial topological properties are robust against biaxial strains of up to +/- 6%. Furthermore, a variable high Chern number of C = 2 or C = 3 can be observed by stacking two or three layers of the QAH monolayer with an MoS2 insulator. Our results signify that such layered kagome materials can be promising platforms for exploring novel QAH physics.
引用
收藏
页码:18745 / 18752
页数:8
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