Vapour-phase deposition of two-dimensional layered chalcogenides

被引:44
|
作者
Zhang, Tianyi [1 ]
Wang, Jiangtao [1 ]
Wu, Peng [1 ]
Lu, Ang-Yu [1 ]
Kong, Jing [1 ]
机构
[1] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
关键词
TRANSITION-METAL DICHALCOGENIDES; MOS2 ATOMIC LAYERS; LARGE-AREA; EPITAXIAL-GROWTH; LOW-TEMPERATURE; INPLANE HETEROSTRUCTURES; GRAIN-BOUNDARIES; SINGLE-CRYSTALS; MONOLAYER; GRAPHENE;
D O I
10.1038/s41578-023-00609-2
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Two-dimensional (2D) layered materials are attracting a lot of attention because of unique physicochemical properties that are intriguing for both fundamental research and emerging technological applications. In particular, 2D layered chalcogenides have diverse properties that depend on their compositions and phases and hold great promise for many applications. Reliable scaled-up synthesis of high-quality 2D layered chalcogenides is a first and necessary step towards their real-world applications, and vapour-phase deposition has emerged as one of the closest practical solutions to achieve this goal. In this Review, we aim to provide a timely discussion on the latest advancements and status of the vapour-phase deposition of 2D layered chalcogenides. We identify critical research aims in terms of material synthesis before the translation of 2D layered chalcogenides from laboratory to manufacturing scale can be realized and highlight research progresses towards those aims. We further discuss the remaining technical challenges that need to be tackled and the future opportunities in this field. Vapour-phase deposition holds promise for synthesizing two-dimensional layered chalcogenides that are intriguing for fundamental research and emerging technological applications. This Review summarizes the advancements and future opportunities for translating this synthesis approach from laboratory to manufacturing scale.
引用
收藏
页码:799 / 821
页数:23
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