High pressure sintering of fully dense tantalum carbide ceramics with limited grain growth

被引:12
|
作者
Zheng, Yi [1 ,2 ]
Zou, Ji [1 ]
Liu, Wei [1 ]
Wang, Weimin [1 ]
Ji, Wei [1 ,2 ]
Fu, Zhengyi [1 ,2 ]
机构
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
[2] Wuhan Univ Technol Xiangyang Demonstrat Zone, Hubei Longzhong Lab, Xiangyang 441000, Peoples R China
基金
中国国家自然科学基金;
关键词
Tantalum carbide; High-pressure sintering; Plastic deformation; High hardness; Electrical property; HIGH TEMPERATURE CERAMICS; MECHANICAL-PROPERTIES; DENSIFICATION MECHANISMS; TAC; MICROSTRUCTURE; COMPOSITES; TOUGHNESS; LAYER;
D O I
10.1016/j.jeurceramsoc.2023.04.032
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this work, TaC ceramics with a high density (98.6 %) and fine grains (1.42 mu m) were fabricated by high pressure sintering. The as-sintered specimen possessed a high dislocation density of 1.9 x 1014 m- 2, which contributed to its high hardness of 16.26 GPa. In addition, the electrical conductivity was improved. The characterization results showed that high pressure greatly promoted densification and limited grain growth. The process provides valuable experiences and ideas for obtaining other fully dense structural ceramics with fine grains.
引用
收藏
页码:5117 / 5124
页数:8
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