Multilevel resistive switching in MoOx/MoSxOy heterostructure memory

被引：0
|
作者：
Mu, Wenjin [1 ]
Hu, Lifang [1 ]
Jia, Weijie [1 ]
Chou, Zhao [1 ]
Cheng, Xiao [1 ]
机构：
[1] Taiyuan Univ Technol, Coll Mat Sci & Engn, Taiyuan 030024, Shanxi, Peoples R China
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2024年 / 174卷
基金：
中国国家自然科学基金;
关键词：
MoSxOy; MoOx; Heterostructure; Multilevel resistive switching; Analog to digital; SYNAPTIC PLASTICITY; MOS2;
D O I：
10.1016/j.mssp.2024.108191
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In recent years, extensive research has been conducted to develop various materials for fabricating numerous resistance states devices in order to meet the requirements of repeatable multilevel storage memory windows. In this study, we present a novel multilevel switching device comprising a MoOx/MoSxOy heterostructure layer vertically stacked with FTO bottom electrode and W top electrode, where the MoOx/MoSxOy heterostructure was prepared by oxidizing MoSxOy nanosheets. By adjusting the RESET-stop voltage, this MoOx/MoSxOy heterostructured device can be considered a five-level switching memory and achieves both analog and digital types of resistive switching behavior in the same device. The results suggest that MoOx/MoSxOy heterostructure-based resistive switching devices have the potential to be used in multilevel data storage resistive random access memory applications.
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页数：6
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