High-Performance InGaN/GaN Photodetectors With 30-Period Multiple Quantum Wells

被引：3
|
作者：
Xie, Feng [1 ]
Yao, Yufei [2 ]
Gu, Yan [2 ]
Hu, Zhijia [1 ]
Yu, Benli [1 ]
Yang, Guofeng [2 ]
机构：
[1] Anhui Univ, Informat Mat & Intelligent Sensing Lab Anhui Prov, Hefei 230039, Peoples R China
[2] Jiangnan Univ, Jiangsu Prov Res Ctr Light Ind Optoelect Engn & Te, Sch Sci, Wuxi 214122, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2023年 / 70卷 / 09期
基金：
中国国家自然科学基金;
关键词：
InGaN/GaN; multiple quantum wells (MQWs); photodetectors (PDs); GAN MULTIQUANTUM-WELL; TRANSPORT;
D O I：
10.1109/TED.2023.3294348
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-performance InGaN/GaN multiple quantum well (MQW) p-i-n photodetector (PD) is fabricated on patterned sapphire substrates (PSSs). The fabricated PD exhibits a low dark current density of <2.0 x 10(-10) A/cm(2) under a bias voltage of -2 V, with a high photocurrent to dark current contrast ratio of over 10(6). Furthermore, the peak responsivity at the wavelength of 395 nm reaches 0.18 A/W at -10 V, corresponding to a maximum quantum efficiency of approximately 56%. In addition, the noise equivalent power (NEP) and normalized detectivity were found to be 1.14 x 10(-11) W and 2.77 x 10(11) cm center dot Hz(0.5) center dot W-1, respectively. The high-performance PD achieved is believed to be related to the high crystalline quality of the InGaN epilayer.
引用
收藏
页码：4685 / 4688
页数：4
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