Probing Carrier Dynamics in Large-Scale MBE-Grown PtSe2 Films by Terahertz Spectroscopy

被引：5

作者：

Ji, Jie ^{[1
]}

Zhou, Yingqiu ^{[1
]}

Zhou, Binbin ^{[2
]}

Desgue, Eva ^{[3
]}

Legagneux, Pierre ^{[3
]}

Jepsen, Peter Uhd ^{[2
]}

Boggild, Peter ^{[1
]}

机构：

[1] Tech Univ Denmark, Dept Phys, DK-2800 Lyngby, Denmark

[2] Tech Univ Denmark, Dept Elect & Photon Engn, DK-2800 Lyngby, Denmark

[3] Thales Res & Technol, F-91767 Palaiseau, France

来源：

ACS APPLIED MATERIALS & INTERFACES | 2023年 / 15卷 / 44期

基金：

新加坡国家研究基金会;

关键词：

THz-TDS spectroscopy; carrier dynamics; large-scaleTMD films; phase transitions; ultrafast light-matterinteractions; molecular beam epitaxy;

D O I：

10.1021/acsami.3c09792

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Atomically thin platinum diselenide (PtSe2) films are promising for applications in the fields of electronics, spintronics, and photodetectors owing to their tunable electronic structure and high carrier mobility. Using terahertz (THz) spectroscopy techniques, we investigated the layer-dependent semiconducting-to-metallic phase transition and associated intrinsic carrier dynamics in large-scale PtSe2 films grown by molecular beam epitaxy. The uniformity of large-scale PtSe2 films was characterized by spatially and frequency-resolved THz-based sheet conductivity mapping. Furthermore, we use an optical-pump-THz-probe technique to study the transport dynamics of photoexcited carriers and explore light-induced intergrain carrier transport in PtSe2 films. We demonstrate large-scale THz-based mapping of the electrical properties of transition metal dichalcogenide films and show that the two noncontact THz-based approaches provide insight in the spatial and temporal properties of PtSe2 films.

引用

页码：51319 / 51329

页数：11