Modelling and analysis of contactless sensor for TSV fault based on resonant inductive coupling*

被引：0
|
作者：
Liu, X. Y. [1 ,2 ]
Chen, Y. Q. [1 ]
Fu, Z. W. [1 ]
Qu, C. B. [1 ]
Deng, Y. H. [2 ]
机构：
[1] Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Compo, Elect Res Inst 5, Guangzhou 510610, Guangdong, Peoples R China
[2] Hunan Inst Engn, Sch Computat Sci & Elect, Xiangtan 411104, Hunan, Peoples R China
来源：
MICROELECTRONICS RELIABILITY | 2023年 / 145卷
基金：
中国国家自然科学基金;
关键词：
Through Silicon Via; Inductive coupling; Fault detect; Antenna;
D O I：
10.1016/j.microrel.2023.115005
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In order to solve the problems of inefficient detection, high cost, and high damage rate of existing Through Silicon Via (TSV) contact detection, contactless testing techniques are urgently needed to eliminate the many problems associated with contact. In this paper, a contactless antenna utilizing resonant inductive coupling is presented. This coupling method, as compared to the conventional capacitive coupling technique allows faults detect from longer distances. The results of 3D full wave simulations in the High Frequency Structure Simulator (HFSS) and Advanced Design System (ADS) show that various faults, such as voids and pinholes, can be detected when the distance between the TSV and the antenna remains about 10 mu m. Defective TSVs cause changes in the operating current and voltage pulses at the detection antenna. Simultaneously, changes in the field distribution around the TSVs are used to explain the changes in current and voltage pulses. Furthermore, the effects of an-tenna parallel movement were also investigated.
引用
收藏
页数：10
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