Kondo enhancement of current-induced spin accumulation in a quantum dot

被引:2
|
作者
Mantsevich, V. N. [1 ]
Smirnov, D. S. [2 ]
机构
[1] Lomonosov Moscow State Univ, Chair Semicond & Cryoelect & Quantum Technol Ctr, Fac Phys, Moscow 119991, Russia
[2] Ioffe Inst, St Petersburg 194021, Russia
基金
俄罗斯科学基金会;
关键词
SINGLE-ELECTRON SPIN; EQUATION-OF-MOTION; ANDERSON MODEL; POLARIZATION; TRANSPORT; STATES;
D O I
10.1103/PhysRevB.108.035409
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Weak spin-orbit coupling produces very limited current-induced spin accumulation in nonmagnetic semiconductor nanostructures. We demonstrate a possibility to parametrically increase spin polarization using the Kondo effect. As a model object we consider a quantum dot side coupled to a quantum wire, taking into account spin-dependent electron tunneling from the wire to the dot. Using the nonequilibrium Green functions, we show that the many-body correlations between the quantum dot and the quantum wire can increase the current-induced spin accumulation at low temperatures by almost two orders of magnitude for moderate system parameters. The enhancement is related to the Kondo peak formation in the density of states and the spin instability due to the strong Coulomb interaction. This effect may be useful to electrically manipulate the localized electron spins in quantum dots for their quantum applications.
引用
收藏
页数:7
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