Layer- and barrier-dependent spin filtering effect and high tunnel magnetoresistance in FeCl2 based van der Waals junctions

被引:7
|
作者
Hu, Lei [1 ,2 ]
Han, Jiangchao [3 ]
Gao, Guoying [1 ,2 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Phys, Wuhan 430074, Peoples R China
[2] Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Peoples R China
[3] Beihang Univ, Fert Beijing Inst, Sch Integrated Circuit Sci & Engn, MIIT Key Lab Spintron, Beijing 100191, Peoples R China
基金
中国国家自然科学基金;
关键词
INTRINSIC FERROMAGNETISM; HALF-METALS;
D O I
10.1063/5.0153195
中图分类号
O59 [应用物理学];
学科分类号
摘要
2D magnetic van der Waals (vdW) junctions have attracted intensive attention due to their easily controllable thickness and clear interface compared to conventional magnetic multilayer films, which provide a perfect platform to control the performance of spintronic devices. Herein, based on the experimentally fabricated FeCl2 flaks with interlayer antiferromagnetism and intralayer ferromagnetism, we explore the spin transport properties of two classes of vdW junctions with an Au electrode, Au/FeCl2/Au (FeCl2 as the tunnel barrier) and Au/FeCl2/barrier/FeCl2/Au (MoS2 or graphene as the tunnel barrier), and focus on the effects of different barriers and the number of layers. It is found that from monolayer to bilayer FeCl2 in Au/FeCl2/Au, the spin filtering effect is considerably increased due to the weakened interface effect, and almost complete spin polarized current can be obtained. For Au/FeCl2/MoS2/FeCl2/Au, whether the number of layers of MoS2 or FeCl2 is increased from monolayer to bilayer, the tunnel magnetoresistance (TMR) becomes higher due to the high spin polarization of FeCl2, which can reach 1 374 000%. The high TMR of 763 000% can also be achieved for Au/FeCl2/graphene/FeCl2/Au. This work suggests potential applications for FeCl2 flaks in 2D vdW spin filters and spin valves and will stimulate broad studies on layer- and barrier-controllable vdW spintronic devices. All calculations are performed by using the first-principles combined with non-equilibrium Green's function method.
引用
收藏
页数:7
相关论文
共 50 条
  • [41] Efficient spin filtering through Fe4GeTe2-based van der Waals heterostructures
    Davoudiniya, Masoumeh
    Sanyal, Biplab
    NANOSCALE ADVANCES, 2024, 6 (24): : 6278 - 6289
  • [42] High tunneling electroresistance in ferroelectric tunnel junctions based on two-dimensional α-In2Se3/MoTe2 van der Waals heterostructures
    Lei, Leitao
    Zhou, Yan-Hong
    Zheng, Xiaohong
    Wan, Wenqiang
    Wang, Weiyang
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2024, 26 (04) : 3253 - 3262
  • [43] Voltage tunable sign inversion of magnetoresistance in van der Waals Fe3GeTe2/MoSe2/Fe3GeTe2 tunnel junctions
    Zhu, Shouguo
    Lin, Hailong
    Zhu, Wenkai
    Li, Weihao
    Zhang, Jing
    Wang, Kaiyou
    APPLIED PHYSICS LETTERS, 2024, 124 (22)
  • [44] Giant tunnel magnetoresistance in two-dimensional van der Waals magnetic tunnel junctions: Ag/CrI3/MoSi2N4/CrI3/Ag
    Liu, Hao
    Wang, Pan
    Zong, Yixin
    Wen, Hongyu
    Liu, Yue-Yang
    Xia, Jianbai
    PHYSICAL REVIEW B, 2022, 106 (10)
  • [45] Above-room Curie temperature and barrier-layer-dependent tunneling magnetoresistance in 1T-CrO2 monolayer based magnetic tunnel junctions
    Liu, Jie
    Tang, Huan
    Gan, Min
    Chen, Hong
    Shi, Xuan
    Yuan, Hongkuan
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2022, 24 (36) : 22007 - 22015
  • [46] From two- to multi -state vertical spin valves without spacer layer based on Fe 3 GeTe 2 van der Waals homo-junctions
    Hu, Ce
    Zhang, Dong
    Yan, Faguang
    Li, Yucai
    Lv, Quanshan
    Zhu, Wenkai
    Wei, Zhongming
    Chang, Kai
    Wang, Kaiyou
    SCIENCE BULLETIN, 2020, 65 (13) : 1072 - 1077
  • [47] Tunneling electroresistance effect and low ON-state resistance-area product in monolayer-In2Se3-based van der Waals ferroelectric tunnel junctions
    Yuan, Jin
    Dai, Jian-Qing
    Liu, Yu-Zhu
    Zhao, Miao-Wei
    SURFACES AND INTERFACES, 2024, 46
  • [48] Resonant tunneling induced large magnetoresistance in vertical van der Waals magnetic tunneling junctions based on type-II spin-gapless semiconductor VSi2P4
    Han, Jiangchao
    Zhou, Daming
    Yang, Wei
    Lv, Chen
    Wang, Xinhe
    Wei, Guodong
    Zhao, Weisheng
    Lin, Xiaoyang
    Sang, Shengbo
    JOURNAL OF MATERIALS CHEMISTRY C, 2024, 12 (02) : 696 - 705
  • [49] Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/Cr2Ge2Te6/Fe3GeTe2 Junctions
    Wang, Zi-Ao
    Zhang, Xiaomin
    Zhu, Wenkai
    Yan, Faguang
    Liu, Pengfei
    Yuan, Zhe
    Wang, Kaiyou
    CHINESE PHYSICS LETTERS, 2023, 40 (07)
  • [50] Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/Cr2Ge2Te6/Fe3GeTe2 Junctions
    王子奥
    张晓敏
    朱文凯
    闫法光
    刘鹏飞
    袁喆
    王开友
    Chinese Physics Letters, 2023, (07) : 59 - 69