Indium-Tin-Oxide Thin-Film Transistors With High Field-Effect Mobility (129.5 cm2/V⋅s) and Low Thermal Budget (150 °C)

In this letter, we demonstrate high performance Indium-Tin-Oxide thin-film transistors (ITO TFTs)with low thermal budget of process temperature less than150 degrees C and a record high peak field-effect mobility (mu eff)of 129.5 cm(2)/V<middle dot>s among any kind of oxide semiconductor(OS) based TFTs with sub-5 nm channel thickness. In addition, the TFTs realized in this work also achieve decentfeatures in terms of other key figure-of-merits, such as highon/off ratio, low drain-induced-barrier-lowering (DIBL), anda small frequency dispersion of the capacitance-voltage(C-V) characteristics. With further benefit of an raisedS/D structure and by scaling the channel length (LCH) ofthe device down to 50 nm, it presents an extremely highon-state current (Ion) of 1260.9 mu A/mu m at a gate over drive voltage V (ov) of 4 V and a moderate drain to source voltage V(DS )of 0.5 V as well as one of the best peak extrinsictransconductance (Gm,ext) of 458 mu S/mu m at a V(DS)of 0.5 V among OS-TFTs