Nanoporous boron-doped diamond produced by a combination of high-energy ion irradiation and anodization

被引：1
|
作者：
Lin, Chenghao [1 ]
Maeda, Yuki [1 ]
Murase, Kuniaki [1 ]
Fukami, Kazuhiro [1 ,2 ]
机构：
[1] Kyoto Univ, Dept Mat Sci & Engn, Kyoto 6068501, Japan
[2] Kyoto Univ, Inst Adv Energy, Integrated Res Ctr Carbon Negat Sci, Kyoto 6110011, Japan
来源：
ELECTROCHEMISTRY COMMUNICATIONS | 2023年 / 149卷
关键词：
Boron -doped diamond; Ion irradiation; Anodization; Nanoporous; POROUS SILICON; ELECTRODEPOSITION;
D O I：
10.1016/j.elecom.2023.107473
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A wide electrochemical window makes boron-doped diamond (BDD) a promising electrode material. To utilize its excellent properties, nanopore formation on the surface to increase the specific surface area is highly desir-able. Although anodization has the potential to produce nanoporous structures on the surface of materials, BDD has yet to be anodized due to its high physical and chemical stability. Here, we report that high-energy Si(II) ion irradiation forms sp2 defects, which enable the anodization of BDD, and demonstrate that this anodization results in the formation of nanoporous BDD.
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页数：5
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