Silicon surface lattice resonances and halide perovskite semiconductors for exciton-polaritons at room temperature

被引:1
|
作者
Nguyen, Dinh hai [1 ]
Nguyen, Sy khiem [1 ]
Tran, Minh quan [1 ]
LE, Viet hoang [1 ]
Trinh, Quoc trung [1 ]
Bui, Son tung [2 ]
Bui, Xuan khuyen [2 ]
Vu, Dinh lam [3 ]
Nguyen, Hai-son [4 ,5 ]
Le-van, Quynh [1 ]
机构
[1] VinUnivers, Coll Engn & Comp Sci, Hanoi 14000, Vietnam
[2] Vietnam Acad Sci & Technol, Inst Mat Sci, 18 Hoang Quoc Viet, Hanoi, Vietnam
[3] Grad Univ Sci & Technol, Vietnam Acad Sci & Technol, 18 Hoang Quoc Viet, Hanoi, Vietnam
[4] Univ Lyon, Univ Claude Bernard Lyon 1, Ecole Cent Lyon, CNRS, F-69130 Ecully, France
[5] Inst Univ France IUF, Paris, France
关键词
STRONG-COUPLING REGIME; MICROCAVITIES; WS2;
D O I
10.1364/OME.475968
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Owing to their high oscillator strength, binding energy, and low-cost fabrication, two-dimensional halide perovskites have recently gained attention as excellent materials for generating exciton-polaritons at room temperature. Unlike traditional materials used for polaritons, such as ZnO, GaAs, and GaN, halide perovskites exhibit great compatibility with matured CMOS technologies. However, no studies have reported perovskite-based polaritons on silicon platforms. Here, we numerically demonstrate the possibility of a polariton when a Si nanodisk array couples with a thin film of phenethylammonium lead iodide perovskite. An asymmetric lattice of thin Si nanodisks is used to generate surface lattice resonances from the coupling between the disk's electrical resonator and the lattice's diffracted waves. Polaritonic modes with high Rabi splitting values can be easily achieved for a large range of parameters. This Rabi splitting can be engineered by varying the ratio of electromagnetic energy confined within the Si disk and perovskite thin film. This study provides insight into nanophotonic structure design for CMOS-based optoelectronics, sensors, and polaritonic devices.(c) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
引用
收藏
页码:179 / 190
页数:12
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