A novel NiO-based p-i-n ultraviolet photodiode

被引：9

作者：

Sarcan, Fahrettin ^{[1
]}

Dogan, Umit ^{[1
]}

Althumali, Ahmad ^{[2
,3
]}

Vasili, Hari B. ^{[2
]}

Lari, Leonardo ^{[2
,4
]}

Kerrigan, Adam ^{[4
]}

Kuruoglu, Furkan ^{[1
]}

Lazarov, Vlado K. ^{[2
,4
]}

Erol, Ayse ^{[1
]}

机构：

[1] Istanbul Univ, Fac Sci, Dept Phys, TR-34134 Istanbul, Turkiye

[2] Univ York, Sch Phys Engn & Technol, York YO10 5DD, England

[3] Taif Univ, Fac Sci, Dept Phys, POB 11099, Taif 21944, Saudi Arabia

[4] Univ York, York JEOL Nanoctr, York YO10 5BR, England

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2023年 / 934卷

关键词：

NiO; N-type NiO; P-type NiO; Ultraviolet photodiode; P-i-n junction; Wide bandgap; Franz-Keldysh; PEROVSKITE SOLAR-CELLS; NEGATIVE CAPACITANCE; THIN-FILMS; HETEROJUNCTION; ZNO; HETEROSTRUCTURE; PHOTODETECTOR; EXTRACTION; ELECTRON; DIODES;

D O I：

10.1016/j.jallcom.2022.167806

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this study, the electrical and optical properties of a novel NiO-based homojunction p-i-n photodiode are reported. The p-i-n diode structure consists of Mg-doped, intrinsic and Cu-doped NiO from the top to the bottom layers, respectively. The photodiode structure was grown on a 0.7 % Nb-doped SrTiO3 (001) sub-strate using molecular beam epitaxy. The homojunction p-type NiO:Mg/i-NiO/n-type NiO:Cu exhibits diode characteristics. The ideality factor and barrier height of the diode are found to be 1.26 and 0.66 eV, re-spectively. The photoconductive properties of the photodiode were investigated by operating the diode under reverse bias, and spectral excitation of a Xe lamp. The responsivity of the photodiode is determined to be 295 mA/W at 3.9 eV. A constant photoresponse of the p-i-n photodiode between 3.75 eV and 6 eV with a responsivity of 250 mA/W is observed.

引用

页数：6

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