Reflective x-ray masks for x-ray lithography

被引：0

作者：

Chumak, V. S. ^{[1
]}

Peredkov, S. ^{[2
]}

Devizenko, A. Yu ^{[1
]}

Kopylets, I. A. ^{[1
]}

Pershyn, Yu P. ^{[1
]}

机构：

[1] Natl Tech Univ, Kharkiv Polytech Inst, 2 Kyrpychova St, UA-61002 Kharkiv, Ukraine

[2] Max Planck Inst Chem Energy Convers, Dept Inorgan Spect, Stiftstr 34-36, D-45470 Mulheim, Germany

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2024年 / 34卷 / 04期

关键词：

x-ray lithography; reflective x-ray mask; x-ray multilayer mirror; image compression; micron imprints; MULTILAYERS;

D O I：

10.1088/1361-6439/ad2f48

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Application of x-ray multilayers as reflective x-ray masks for x-ray lithography is proposed. The mask is a specially prepared multilayer mirror capable to selectively reflect x-rays. The use of grazing geometry allows a pattern design on the mask to be compressed in one direction. Application examples are given for the masks (WC/Si multilayers) with two types of a radiation source: an x-ray tube (lambda = 0.154 nm) and a synchrotron (lambda similar to 0.35 nm). The compression of the mask segments by 14-33 times with the imprint size in the resist plane 3.5-4 mu m is obtained. The advantages of the proposed masks are given. The possibilities of obtaining submicron imprints are discussed.

引用

页数：10

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