Chemical conversion of MoS2 thin films deposited by atomic layer deposition (ALD) into molybdenum nitride monitored by in situ reflectance measurements

被引：0
|
作者：
Patouillard, J. [1 ,2 ,3 ]
Gassilloud, R. [2 ,3 ]
Mercier, F. [1 ]
Mantoux, A. [1 ]
Boichot, R. [1 ]
Crisci, A. [1 ]
Bernard, M. [2 ,3 ]
Gauthier, N. [2 ,3 ]
Cadot, S. [2 ,3 ]
Raynaud, C. [2 ,3 ]
Gianesello, F. [4 ]
Blanquet, E. [1 ]
机构：
[1] Univ Grenoble Alpes, CNRS, Grenoble INP, SIMaP, F-38000 Grenoble, France
[2] Univ Grenoble Alpes, CEA, LETI, Minatec Campus, FR-38000 Grenoble, France
[3] CEA, LETI, Minatec Campus, FR-38054 Grenoble 9, France
[4] STMicroelectronics, 850 rue Jean Monnet, F-38926 Crolles, France
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2023年 / 41卷 / 05期
关键词：
TRANSITION-METAL NITRIDES; SURFACE-PROPERTIES; DIFFUSION BARRIER; RAMAN; BULK; MONOLAYER; GROWTH; 1ST-PRINCIPLES; SPECTROSCOPY; NANOSHEETS;
D O I：
10.1116/6.0002678
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Two-dimensional (2D) metal nitrides are new emerging materials with potential applications in electronics, energy storage, or conversion efficiency. In this paper, we report the synthesis of molybdenum nitride by nitriding molybdenum disulfide (MoS2) via a 700 ? ammonia (NH3) reactive heat treatment. A well-controlled uniform MoS2 thin film was prepared by atomic layer deposition (ALD). The progressive MoS2 nitriding reaction has been demonstrated and monitored by in situ reflectance measurements. These results have been confirmed by Raman and x-ray photoelectron spectrometry. This method paves the way to a new potential route to the synthesis of Mo nitride obtained from a well-controlled uniform 2D-MoS2 thin film deposited by ALD.
引用
收藏
页数：9
相关论文
共 50 条
  • [41] Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS2 Thin Films at 150 °C
    Mattinen, Miika
    Schulpen, Jeff J. P. M.
    Dawley, Rebecca A. A.
    Gity, Farzan
    Verheijen, Marcel A. A.
    Kessels, Wilhelmus M. M.
    Bol, Ageeth A. A.
    ACS APPLIED MATERIALS & INTERFACES, 2023, 15 (29) : 35565 - 35579
  • [42] Molybdenum Thin Film Formation from Molybdenum Nitride Deposited by Plasma-enhanced Atomic Layer Deposition with Hydrogen-permeable Mechanical Capping Layer
    Park, Jeong Hyeon
    Kim, Ye Won
    Kim, Myeong Ho
    Kim, Jin-Sik
    Jeon, Woojin
    ACS APPLIED ELECTRONIC MATERIALS, 2023, 5 (08) : 4542 - 4548
  • [43] Ultrashort-Pulsed-Laser Annealing of Amorphous Atomic-Layer-Deposited MoS2 Films
    Becher, Malte Jonas Marius Julian
    Jagosz, Julia
    Neubieser, Rahel-Manuela
    Wree, Jan-Lucas
    Devi, Anjana
    Michel, Marvin
    Bock, Claudia
    Gurevich, Evgeny L.
    Ostendorf, Andreas
    ADVANCED ENGINEERING MATERIALS, 2023, 25 (21)
  • [44] Tribological behavior of few-nanometer-thick MoS2 prepared by low-temperature conversion of atomic layer deposited MoOx films
    Babuska, Tomas F.
    Dugger, Michael T.
    Walczak, Karl A.
    Lu, Ping
    Schwartzberg, Adam
    Aloni, Shaul
    Kuykendall, Tevye R.
    Curry, John F.
    SURFACE & COATINGS TECHNOLOGY, 2023, 471
  • [45] Atomic layer deposition of ZnO thin film on surface modified monolayer MoS2 with enhanced photoresponse
    Lv, Wenquan
    Liu, Jie
    He, Yuan
    You, Junhua
    CERAMICS INTERNATIONAL, 2018, 44 (18) : 23310 - 23314
  • [46] Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
    Jang, Yujin
    Kim, Jun Beom
    Hong, Tae Eun
    Yeo, So Jeong
    Lee, Sunju
    Jung, Eun Ae
    Park, Bo Keun
    Chung, Taek-Mo
    Kim, Chang Gyoun
    Lee, Do-Joong
    Lee, Han-Bo-Ram
    Kim, Soo-Hyun
    JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 663 : 651 - 658
  • [47] Electrical characterization of amorphous LiAlO2 thin films deposited by atomic layer deposition
    Hu, Yang
    Ruud, Amund
    Miikkulainen, Ville
    Norby, Truls
    Nilsen, Ola
    Fjellvag, Helmer
    RSC ADVANCES, 2016, 6 (65) : 60479 - 60486
  • [48] Effects of various oxidizers on the ZrO2 thin films deposited by atomic layer deposition
    Jeong, D
    Lee, J
    Kim, J
    INTEGRATED FERROELECTRICS, 2004, 67 : 41 - 48
  • [49] Atomic Layer Deposition of High-Quality Al2O3 Thin Films on MoS2 with Water Plasma Treatment
    Huang, Binjie
    Zheng, Minrui
    Zhao, Yunshan
    Wu, Jing
    Thong, John T. L.
    ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (38) : 35438 - 35443
  • [50] Thermal annealing of superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
    Gonzalez Diaz-Palacio, Isabel
    Wenskat, Marc
    Deyu, Getnet Kacha
    Hillert, Wolfgang
    Blick, Robert H.
    Zierold, Robert
    JOURNAL OF APPLIED PHYSICS, 2023, 134 (03)
12345