Stacking and spin order in a van der Waals Mott insulator 1T-TaS2

被引:3
|
作者
Park, Jae Whan [1 ]
Lee, Jinwon [1 ,2 ,3 ]
Yeom, Han Woong [1 ,2 ]
机构
[1] Inst Basic Sci IBS, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South Korea
[2] Pohang Univ Sci & Technol POSTECH, Dept Phys, Pohang 37673, South Korea
[3] Delft Univ Technol, Kavli Inst Nanosci, Dept Quantum Nanosci, NL-2628 CJ Delft, Netherlands
关键词
STATE;
D O I
10.1038/s43246-023-00425-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Quasi-two-dimensional charge density wave system of 1T-TaS2 has attracted recent interest due to topological excitations, emergent superconductivity, ultrafast synaptic functionality, and the possibility of a quantum spin liquid state. While electron correlation has been known to be essential in this system, the nature of its insulating phase is currently under debate. Here, we reinvestigate the origin of the insulating band structures of the 1T-TaS2 surface using density-functional theory calculations to consider the recently-raised issues such as interlayer coupling, surface effect, and interlayer spin ordering. We identify four distinct electronic states of the surface layer such as a 2D Mott phase, a strongly-coupled antiferromagnetic insulator, a weakly-coupled ferromagnetic insulator, and a small-gap semiconductor, depending on types of the surface termination and the interlayer spin configuration. These distinct surface electronic states explain the different sizes of spectroscopic band gaps observed in scanning tunneling microscopy, revealing the complexity of the interlayer charge and spin couplings in layered correlated materials.
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页数:6
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