Modelling and Simulations of Ferroelectric Materials and Ferroelectric-Based Nanoelectronic Devices (Invited Paper)

被引:0
|
作者
Esseni, D. [1 ]
Driussi, F. [1 ]
Lizzit, D. [1 ]
Massarotto, M. [1 ]
Segatto, M. [1 ]
机构
[1] Univ Udine, DPIA, Udine, Italy
关键词
Ferroelectrics; modelling and simulations; polarization dynamics; FT[!text type='Js']Js[!/text; FeFETs; NEGATIVE CAPACITANCE; FIELD; POLARIZATION; HYSTERESIS;
D O I
10.23919/SISPAD57422.2023.10319574
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper provides a brief introduction to the phenomenological aspects of the polarization in ferrroelectric materials, and then an analysis of a few selected topics related to the modelling of ferroelectrics. The description of ferroelectric-based devices is quite challenging, particularly because the ferroelectric is frequently stacked with other dielectrics or with a semiconductor, as opposed to being placed between metal electrodes. Predictive modelling of ferroelectric devices is admittedly difficult, and thus the scrutiny and calibration of the models by comparison to sound experimental data is of paramount importance.
引用
收藏
页码:9 / 12
页数:4
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