β-Ga2O3 Lateral Schottky Barrier Diodes With > 10 kV Breakdown Voltage and Anode Engineering

被引：16

作者：

Wang, Chenlu ^{[1
]}

Yan, Qinglong ^{[1
]}

Zhang, Chaoqun ^{[1
]}

Su, Chunxu ^{[1
]}

Zhang, Kun ^{[1
]}

Sun, Sihan ^{[1
]}

Liu, Zhihong ^{[2
]}

Zhang, Weihang ^{[2
]}

Alghamdi, Sami ^{[3
]}

Ghandourah, Emad ^{[3
]}

Zhang, Chunfu ^{[1
]}

Zhang, Jincheng ^{[1
,2
]}

Zhou, Hong ^{[1
,2
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

[2] Xidian Univ, Guangzhou Inst Technol, Guangzhou Wide Bandgap Semicond Innovat Ctr, Guangzhou 510555, Peoples R China

[3] King Abdulaziz Univ, Dept Elect & Comp Engn, Jeddah 21589, Saudi Arabia

来源：

IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 10期

关键词：

Ga2O3; lateral Schottky barrier diode; post anode deposition annealing; field-plate; breakdown voltage; BV2/R-ON; R-SP; PERFORMANCE; GW/CM(2); FIGURE;

D O I：

10.1109/LED.2023.3309674

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we demonstrated beta-Ga2O3 lateral Schottky barrier diodes (SBDs) with breakdown voltage (BV) over 10 kV via anode engineering techniques. Post-anode deposition annealing (PAA) was implemented to enhance the Schottky barrier height (SBH) to minimize the leakage current and suppress the interface state density (D-it) by over 1 order of magnitude. It is found that the D-it was extracted to be only 3 x 10(10) cm(-2)eV-1 at the energy level near the conduction band after the PAA treatment. Benefiting from the PAA and the coupled as well as the carefully designed dual field-plate (FP) structure, the BV of the SBD was enhanced from about 4 kV to over 10 kV while the turn-on voltage (V-on) for those SBDs remained approximately at 1 V. These findings show the immense potential of anode engineered Ga2O3 diodes for future high-voltage and high-power electronic systems.

引用

页码：1684 / 1687

页数：4

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β-Ga2O3 Lateral Schottky Barrier Diodes With &gt; 10 kV Breakdown Voltage and Anode Engineering

β-Ga2O3 Lateral Schottky Barrier Diodes With > 10 kV Breakdown Voltage and Anode Engineering