Analysis of Dielectric Characteristics of Lead Oxide/p-type Silicon Structure in a Wide Frequency and Voltage Region

Here, the dielectric features of the Pb/PbO/p-Si junction, which was experimentally formed by the SILAR method, were researched in the frequency section of 10 kHz-2 MHz and voltage region of 0 V-0.72 V at room temperature. G(p)/omega-V, R-S and N-SS parameters were used to research the electrical features of the contact. It was concluded that R-S and N-SS are highly dependent on frequency and applied voltage in the depletion and accumulation sections, respectively. The R-S parameters was found to drop almost exponentially with increasing frequency. NSS values decreased from 2.99 10(12 )eV(-1) cm(-2 )for (E-SS-E-V) = 0.06 eV to 1.62 10(12) eV(-1) cm(-2) for (E-SS-E-V) = 0.58 eV. The tau values were found to be 3.15 10(-4) s and 1.58 10(-6) s, respectively. The values of N-SS and tau were found to be suitable for the production of electronic devices. In addition, it has been extracted that our measurements are largely dependent on frequency and voltage and also compatible with the literature. In the section on dielectric properties, properties such as ?', ?'', tan delta, M ', M '', and sigma(ac) were discussed for the analysis of dielectric characteristics. The difference in the dielectric properties of the MIS structure at different frequencies depends on the interfacial polarisation, interfacial density and electric dipole polarisation. The fact that the dielectric property is inversely proportional to frequency in the study can again be related to the interfacial states. The parameters of ?' and ?'' decrease with rising applied frequency and voltage. This can be ascribed to the reorganisation of the charges in the traps and their polarisation under voltage. Conductance rises at high frequencies, which is a result of the increase in the mobility of charges at high frequencies. In addition, the Pb/PbO/p-Si structure may be an advantageous option as it provides low cost, ease of fabrication, high electric field strength and charge storage.