Boron migration during amorphous to crystalline transformation in CoFeB/MgO multilayers: A reflectivity study

被引:1
|
作者
Vishwakarma, Pramod [1 ,2 ]
Sharma, Gagan [1 ]
Modi, M. H. [3 ]
Gupta, Mukul [4 ]
Stahn, Jochen [5 ]
Gupta, Ajay [6 ]
机构
[1] Amity Univ, Amity Ctr Spintron Mat, Sect 125, Noida 201313, India
[2] Polish Acad Sci, Inst Phys, Int Res Ctr MagTop, PL-02668 Warsaw, Poland
[3] Raja Ramanna Ctr Adv Technol, Indore 452013, India
[4] Univ Campus, UGC, DAE Consortium Sci Res, Khandwa Rd, Indore 452001, India
[5] Paul Scherrer Inst, Forschungsstr 111, CH-5232 Villigen, Switzerland
[6] Univ Petr, Energy Studies, Bidholi Campus, Dehra Dun 248007, India
关键词
CoFeB; MgO; Boron migration; Thermal annealing; Anomalous soft X-ray reflectivity; Polarized neutron reflectivity; TUNNEL; MAGNETORESISTANCE;
D O I
10.1016/j.materresbull.2023.112150
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Migration of boron in CoFeB/MgO multilayer during amorphous to crystalline transformation in CoFeB has been studied using Polarized Neutron Reflectivity (PNR) and anomalous Soft X-ray Reflectivity (SXR). PNR gives information about the possible redistribution of B in the multilayer during thermal annealing, as well as about the variation in the average magnetic moment. Sensitivity of the soft X-ray reflectivity to the movement of boron is enhanced by doing a series of measurements with X-ray energy spanning across the K absorption edge of B. Both the PNR and anomalous SXR results clearly suggest that upon thermal annealing, boron prefers to move away from the MgO/CoFeB interfaces, and forms a layer of boride in the middle of the magnetic layer. These results are important in view of the existing ambiguity regarding the role of boron in CoFeB/MgO based magnetic tunnel junctions.
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页数:7
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