Enhancing multi-state programming and synaptic plasticity through optical stimulation in Bi-alloyed Cs2AgInCl6 double perovskite based memristor

被引：8

作者：

Kou, Guiyue ^{[1
]}

Mu, Mingfei ^{[2
]}

Lin, Mouyou ^{[1
]}

Zhu, Zhifang ^{[1
]}

Yang, Xiaopin ^{[1
]}

Yang, Yanyan ^{[1
]}

机构：

[1] Nanchang Inst Technol, Sch Mech Engn, Nanchang 330099, Peoples R China

[2] Shandong Univ Sci & Technol, Coll Mech & Elect Engn, Qingdao 266590, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2023年 / 957卷

关键词：

Double perovskite; Lead-free; Partial substitution; Optical stimulation; ON; OFF ratio; Memristor; HALIDE PEROVSKITES; MEMORY;

D O I：

10.1016/j.jallcom.2023.169999

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Long-term stability and toxicity issue of the halide perovskite based electronic devices have been aimed to resolve. Considering the requirement of miniaturization without compromising the scaling limit, it is possible to witness, having double halide perovskite as the material of interest. In this work, we have partially substituted the trivalent indium ion with bismuth ion having higher ionic radius in lead-free double perovskite Cs2AgInCl6 by simple solution process. The purpose was novel as it diversified the ap-plication of this material in memristor device by initiating optically stimulated response of device con-ductance. The Au/Cs2AgIn0.8Bi0.2Cl6/ITO device was found to be superior to the Au/Cs2AgInCl6/ITO device in terms of switching window, high-density storage and synaptic plasticity. The improvement in device credibility is attributed to the shift in optical absorption and structural distortion upon bismuth inclusion. Moreover, the film topography of the double perovskite has also enhanced significantly in this process. Bismuth incorporation not only promotes the optical phenomenon in the device but also increases the concentration of bromide vacancies, which is beneficial for the memory and artificial learning performance. Since, the activation energy of bromide ions/vacancies is comparatively low; so, it immensely impacted the device performance due to higher migration rate. (c) 2023 Published by Elsevier B.V.

引用

页数：9