Control of resistive switching type in BaTiO3 thin films grown by high and low laser fluence

被引:2
|
作者
Li, Ang [1 ]
Li, Qinxuan [1 ]
Jia, Caihong [1 ]
Zhang, Weifeng [1 ,2 ]
机构
[1] Henan Univ, Sch Future Technol, Henan Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China
[2] Henan Acad Sci, Inst Quantum Mat & Phys, Zhengzhou 450046, Peoples R China
基金
中国国家自然科学基金;
关键词
TUNNEL-JUNCTIONS; ELECTRORESISTANCE; RESISTANCE; BEHAVIOR; SINGLE; STATE;
D O I
10.1063/5.0142736
中图分类号
O59 [应用物理学];
学科分类号
摘要
A ferroelectric memristor has attracted much attention due to convenient controlling by polarization switching, but the resistive switching has been attributed to the drift or charge trapping of defects. To distinguish the resistive switching mechanism between ferroelectric polarization switching and the normal resistive switching mechanism such as the drift or charge trapping of defects, BaTiO3 (BTO) thin films were grown on a (001) Nb:SrTiO3 single crystal substrate by pulsed laser deposition with high and low laser energy density. Based on a piezoelectric force microscope, ferroelectricity is found in BTO thin films grown at high laser energy density. X-ray photoelectron spectroscopy further confirms the existence of defects in the BTO films grown at low laser energy density. The high energy sample with low density of defects exhibits a resistance hysteresis loop but little current hysteresis loop, while the low energy sample with high density of defects shows a significant resistance and current hysteresis loop simultaneously. These results provide a deep understanding about the resistive switching from ferroelectric polarization switching and the drift or charge trapping of defects.
引用
收藏
页数:8
相关论文
共 50 条
  • [31] Effect of substitution of Ti by Zr in BaTiO3 thin films grown by MOCVD
    Pantou, R
    Dubourdieu, C
    Weiss, F
    Kreisel, J
    Köbernik, G
    Haessler, W
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2002, 5 (2-3) : 237 - 241
  • [32] Characterization of pulsed-laser deposited BaTiO3 thin films
    Xu, H
    Durisin, DP
    Zhao, Q
    Auner, GW
    FUNCTIONAL INTEGRATION OF OPTO-ELECTRO-MECHANICAL DEVICES AND SYSTEMS II, 2002, 4647 : 87 - 94
  • [33] Pulsed Laser Deposition of BaTiO3 Thin Films on Different Substrates
    Yang, Yaodong
    Wang, Zhiguang
    Li, Jie-Fang
    Viehland, D.
    JOURNAL OF NANOMATERIALS, 2010, 2010
  • [34] Pulsed laser deposition of BaTiO3 thin films and their optical properties
    State Univ of New York at Buffalo, Amherst, United States
    Appl Phys Lett, 13 (1803-1805):
  • [35] Piezoelectric properties of BaTiO3 thin films grown by ECR-PLD
    Ito, S
    Nakamura, K
    Ishikawa, K
    2005 IEEE Ultrasonics Symposium, Vols 1-4, 2005, : 1637 - 1639
  • [36] Studies of pulsed laser deposition processes of BaTiO3 thin films
    Garcia, T.
    Bartolo-Perez, P.
    de Posada, E.
    Pena, J. L.
    Villagran-Muniz, M.
    SURFACE & COATINGS TECHNOLOGY, 2006, 201 (06): : 3621 - 3624
  • [37] Dielectric properties of BaTiO3 thin films prepared by laser ablation
    Fujita, Junya
    Suzuki, Keigo
    Wada, Nobuyuki
    Sakabe, Yukio
    Takeuchi, Kazuo
    Ohki, Yoshimichi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (10A): : 7806 - 7812
  • [38] Complementary resistive switching in BaTiO3/NiO bilayer with opposite switching polarities
    Li, Shuo
    Wei, Xianhua
    Lei, Yao
    Yuan, Xincai
    Zeng, Huizhong
    APPLIED SURFACE SCIENCE, 2016, 389 : 977 - 982
  • [39] Crystallographic and microstructural studies of BaTiO3 thin films grown on SrTiO3 by laser molecular beam epitaxy
    Cui, DF
    Wang, HS
    Chen, ZH
    Zhou, YL
    Lu, HB
    Yang, GZ
    Ma, K
    Chen, H
    Li, L
    Liu, W
    Zhang, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (02): : 275 - 278
  • [40] Structure evolution of the interfacial layer of BaTiO3 thin films during annealing process and related good resistive switching behaviors
    Huang, Sizhao
    Zhu, Wenxuan
    Birkhoelzer, Yorick A.
    Avila, Romar Angelo
    Huang, Houbing
    Lou, Xiaojie
    Houwman, Evert P.
    Nguyen, Minh D.
    Koster, Gertjan
    Rijnders, Guus
    APL MATERIALS, 2023, 11 (10)