Triple-halide wide-bandgap perovskites tailored via facile organic halide treatment for high-performance perovskite/Cu(In,Ga)Se2 tandem solar cells

被引:3
|
作者
Tran, Huyen [1 ,2 ]
Naqvi, Syed Dildar Haider [1 ,2 ]
Kim, Kihwan [1 ,2 ]
Lee, Ahreum [1 ]
Oh, Seungju [3 ]
Siddique, Yasir [1 ,2 ]
Ullah, Asmat [1 ,2 ]
Ali, Shah Syed Fawad [1 ,2 ]
Park, Minwoo [3 ]
Hong, Sungjun [1 ,2 ]
Ahn, Sejin [1 ,2 ]
Gwak, Jihye [1 ,2 ]
Jeong, Inyoung [1 ]
机构
[1] Korea Inst Energy Res KIER, Photovolta Res Dept, Daejeon 34129, South Korea
[2] Univ Sci & Technol UST, Dept Renewable Energy Engn, Daejeon 34113, South Korea
[3] Sookmyung Womens Univ, Dept Chem & Biol Engn, Seoul 04310, South Korea
基金
新加坡国家研究基金会;
关键词
Defect passivation; Perovskite solar cell; Copper indium gallium selenide; Tandem cell; CUBIC PHASE; EFFICIENT; FILMS; CH3NH3PBI3; TRIHALIDE;
D O I
10.1016/j.cej.2023.146825
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Wide-bandgap (Eg) perovskites (PVSK) are important materials for realizing high-efficiency tandem devices that surpass the efficiency limit of single-junction solar cells. However, they suffer from phase separation and opencircuit voltage (Voc) loss. This study demonstrated a facile fabrication strategy of highly efficient and stable wideEg PVSKs through an organic halide surface treatment with formamidinium bromide to CH3NH3PbI3-xClx. The concurrent diffusion of organic cations and halide ions from the surface into bulk PVSK results in the complete conversion of the PVSK crystallinity to a cubic phase, eliminating segregated secondary phases and reducing unreacted PbI2. Br incorporation induces halide redistribution, resulting in the formation of triple-halide wide-Eg PVSK. The complete reconstruction of the bulk and surface of PVSK by surface post-treatment suppresses trapinduced nonradiative recombination and decreases the Urbach tail energy. Inverted PVSK solar cells based on the reconstructed PVSK exhibit enhanced photovoltaic performance with a low Voc deficit and high stability. In addition, we demonstrated a four-terminal (4-T) tandem device based on the triple-halide wide-Eg PVSK as a top cell combining with a Cu(In,Ga)Se2 bottom cell, achieving a power conversion efficiency of 24.5 %.
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页数:10
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