On Cold Operation of an SiGe HBT as a Broadband Low-NEP THz Direct Detector

被引:0
|
作者
Grzyb, J. [1 ]
Andree, M. [1 ]
Heinemann, B. [2 ]
Ruecker, H. [2 ]
Pfeiffer, U. R. [1 ]
机构
[1] Berg Univ Gesamthsch Wuppertal, IHCT, Rainer Gruenter Str 21, D-42119 Wuppertal, Germany
[2] IHP Leibniz Inst Innovat Mikroelekt, D-15236 Frankfurt, Germany
关键词
D O I
10.1109/IRMMW-THz57677.2023.10299102
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports on cold operation of a SiGe HBT in an experimental 0.13-mu m technology as a broadband THz power detector and compares it against the classical forward-active operation range based on a frequency-dependent nonlinear device model. In the near-THz fractional bandwidth of 250-1000 GHz, a state-of-the-art optical NEP of 3.9-28 pW/root Hz and 2.116 pW/root Hz for cold and forward-active operation, respectively, was measured for the antenna-coupled THz detector comprising 2 devices in common-base (CB) configuration.
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